My scientific publications

 

Refereed papers                                                                     李建平            C. P. Lee        

             1.        I. Samid, C. P. Lee, A. Gover and A. Yariv, "Embedded heterostructure epitaxy: A technique for two dimensional thin film definition", Appl. Phys. Lett., 27, 405, (1975)

             2.        K. Gamo, T. Inada, I. Samid, C. P. Lee, and J. W. Mayor, "Analysis of GaAlAs heteroepitaxial layers by proton backscattering", in Ion Beam Surface Analysis, Plem Press (1975)

             3.        C. P. Lee, I. Samid, A. Gover, and A. Yariv, "Low threshold room temperature embedded heterosture lasers", Appl. Phys. Lett. 29, 365, (1976)

             4.        A. Gover, C. P. Lee and A. Yariv, "Direct transmission of pictorial information in multimode optical fibers", J. Opt. Soc. Am. 66, 306, (1976)

             5.        C. P. Lee, A. Gover, S. Margalit, I. Samid and A. Yariv, "Barrier Controlled low threshold PNPN GaAs heterostructure lasers", Appl. Phys. Lett., 30, 535 (1977)

             6.        C. P. Lee, S. Margalit and A. Yariv, "Double-heterostructure GaAs-GaAlAs injection lasers on semi-insulating substrates using carrier crowding", Appl. Phys. Lett., 31, 281 (1977)

             7.        C. P. Lee, S. Margalit, I. Ury and A. Yariv, "GaAs-GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctions", Appl. Phys. Lett., 32, 410 (1978)

             8.        C. P. Lee, S. Margalit, I. Ury and A. Yariv, "Integration of an injection laser with a Gunn oscillator on a semi-insulation GaAs substrate", Appl. Phys. Lett., 32, 806 (1978)

             9.        C. P. Lee, S. Margalit and A. Yariv, "Dependence of Zn diffusion on the Al content in Ga1-x Alx As", Solid State Electron. 21, 905 (1978)

            10.      C. P. Lee, S. Margalit and A. Yariv, "Waveguiding in an exponentially decaying gain medium", Optics Comm. 25, 1 (1978)

            11.      C. P. Lee, S. Margalit, and A. Yariv, "GaAs-GaAlAs heterostructure lasers on semi insulating substrates", IEEE Trans. Electron Device, ED-25, 1250 (1978)

            12.      S. Margalit, D. Fekete, D. M. Pepper, C. P. Lee and A. Yariv,  "Q-switched ruby laser alloying of ohmic contacts on GaAs epilayers", Appl. Phys. Lett., 33, 346 (1978)

            13.      C. P. Lee, R. Zucca and B. M. Welch, "Orientation effect on planar GaAs Schottky Barrier field effect transistors", Appl. Phys. Lett., 37, 313 (1980)

            14.      R. Zucca, B. M. Welch, C. P. Lee, R. C. Eden and S. I. Long, "Process evaluation test structures and measurement techniques for a planar GaAs IC technology", IEEE Trans. Electron. Device, ED-27, 2292 (1980)

            15.      C. P. Lee, J. L. Tandon and P. J. Stocker, "Alloying behavior of Au-Ge/ Pt ohmic contacts to GaAs by pulsed electron beam and furnace heating", Electron Lett., 16, 849 (1980)

            16.      C. P. Lee, B. M. Welch and W. P. Fleming, "Reliability of AuGe/Pt and AuGe/Ni ohmic contacts on GaAs", Electron Lett., 17, 407 (1981)

            17.      S. J. Lee and C. P. Lee, "Temperature effect on low threshold voltage ion-implanted GaAs MESFETs", Electron. Lett., 17, 760 (1981)

            18.      C. P. Lee, B. M. Welch and J. L. Tandon, "Reliability of pulsed electron beam alloyed AuGe/Pt ohmic contacts on GaAs", Appl. Phys. Lett., 39, 556 (1981)

            19.      S. I. Long, B. M. Welch, R. Zucca, P. Asbeck, C. P. Lee, C. Kirkpatric, F. Lee, G. Kaelin and R. C. Eden, " High speed GaAs integrated circuiots", IEEE Proc. 70, 35 (1982)

            20.      C. P. Lee, S. J. Lee and B. M. Welch, "Carrier injection and backgating effect in GaAs MESFETs", IEEE Electron Device Lett., EDL-3, 97 (1982)

            21.      C. P. Lee, B. M. Welch, and R. Zucca, "Saturated resistor load for GaAs integrated circuits", IEEE Trans. Electron Device, ED-29, 1103 (1982)

            22.      F. S. Lee, G. Kaelin, B. M. Welch, R. Zucca, E. Shen, P. Asbeck, C. P. Lee, C. Kirkpatrick, S. I. Long, and R. C. Eden, "A high speed LSI 8 x 8 bit parallel multiplier", IEEE J. Solid State Circuits, SC-17, 638 (1982)

            23.      C. P. Lee and B. M. Welch, "GaAs MESFETs with partial p-type drain regions", IEEE Electron Dvice Lett., EDL-3, 200 (1982)

            24.      C. P. Lee, "Influence of substrates on the electrical properties of GaAs FET devices and integrated circuits", in III-V Semi-insulating Materials, p.324, S. Makram Ebeid and B. Tuck Eds., Shiva publication, (1982)

            25.      C. P. Lee and W. I. Wang, "High performance modulation doped GaAs integrated circuits with panar structures", Electron Lett., 19, 155 (1983)

            26.      S. J. Lee, C.P. Lee, E. Shen and G. Kaelin, "Modeling of backgating effects on GaAs digital integrated circuits", IEEE Solid State Circuits, SC-19, 245 (1984)

            27.      C. P. Lee, S. J. Lee, D. Hou, D. L. Miller and R. J. Anderson, "High speed frequency dividers using GaAs/GaAlAs high electron mobility transistors", Electron Lett., 20, 217 (1984)

            28.      S. J. Lee, C. P. Lee, D. Hou, R. J. Anderson and D. L. Miller,  "Static Randon access memory using high electron mobility transistors", IEEE Electron Device Lett., EDL-5, 115 (1984)

            29.      P. M. Asbeck, C. P. Lee and M. F. Chang, "Piezoelectric effects in GaAs FETs and their role in orientation dependent device characteristics", IEEE Trans. Electron Device, ED-31, 1377 (1984)

            30.      C. P. Lee, M. F. Chang, P. M. Asbeck, D. L. Hou, R. Vahrenkamp, and C. Kirkpatrick, "Orientaion dependence of device uniformity in GaAsICs", in III-V Semi-insulating Material, Ed. by D. C. Look and J. S. Blakemore, p.347, Shiva Publishing, (1984)

            31.      M. F. Chang, C. P. Lee, R. Vahrenkamp, D. Hou, D. Holmes and C. Kirkpatrick, "Material parameters affecting surface leakage in GaAs ICs", in III-V Semi-insulating Material, Ed. by D. C. Look and J. S. Blakemore, P.378, Shiva Publishing, (1984)

            32.      M. F. Chang, C. P. Lee, D. Hou, R. Vahrenkamp and C. Kirkpatrick,  "Mechanism of surface conduction in Semi-insulating GaAs", Appl. Phys. Lett., 44, 869 (1984)

            33.      F. Eisen, P. Asbeck, C. P. Lee and D. Miller, "Hetrerostructure electronics", IEEE Electronics Technology Review, 53 (1984)

            34.      M. F. Chang, C.P. Lee, P. Asbeck, R. Vahrenkamp, and C. Kirkpatrick, "Role of piezoelectric effect in device uniformity of GaAs ICs", Appl. Phys. Lett., 45, 279 (1984)

            35.      M. F. Chang, C. P. Lee, N. H. Sheng, C. Kirkpatrick, and R. T. Chen,  "Dry-process induced isolation-degradation in GaAs integrated circuits"  in Microscopic Identification of Electronic Defects in Semiconductors, MRS vol.46, 415, 1984

            36.      C. P. Lee and M. F. Chang, "Shielding of backgating effects in GaAs ICs", IEEE Electron Device Lett., EDL-6, 169 (1985)

            37.      C. P. Lee and M. F. Chang, "Temperature dependence of backgating effects in GaAs ICs", IEEE Electron Device Lett., EDL-6, 428 (1985)

            38.      M. F. Chang, S. J. Lee, E. R. Walton, C. P. Lee, F. Ryan, R. Vahrenkamp and C. Kirkpatrick, "High speed GaAs frenquency dividers using self-aligned dual-level double lift-off substitution gate MESFET process", IEEE Electron Device Lett., EDL-6, 279 (1985)

            39.      N. H. Sheng, C. P. Lee, R. T. Chen, D. L. Miller and S. J. Lee, "Multiple-channel GaAs/GaAlAs high electron mobility transistors", IEEE Electron Device Lett., EDL-6, 397 (1985)

            40.      N. H. Sheng, M. F. Chang, C. P. Lee and D. L. Miller, "Close drain- source Self-aligned GaAs/GaAlAs high electron mobility transistors", IEEE Electron Device Lett., EDL-7, 11 (1986)

            41.      S. K. Chung, Y, Wu, K.L. Wang, N.H. Sheng, C.P. Lee and D. Miller, "Interface    states of the heterojunction in modulation doped AlGaAs/GaAs FETs", IEEE Trans. Electron Device, ED-34, 149 (1987)

            42.      C. P. Lee, H. T. Wang, G. J. Sullivan, N. H. Sheng and D. L. Miller, "High transconductanc p-channel InGaAs/GaAs modulation-doped field effect transistors", IEEE Electron Device Lett., EDL-8, 85 (1987)

            43.      N. H. Sheng, H. T. Wang, C. P. Lee, G. J. Sullivan and D. L. Miller,  "A high speed 1-k bit high electron mobility transistor static RAM", IEEE Trans. Electron Device, ED-34, 1670 (1987)

            44.      R. Y. Hwang, C. P. Lee, and T. F. Lei, "GaAs/AlGaAs laser arrays with and without proton isolation", J. of Chin. Inst. of Engineers, 12, 255 (1989)

            45.      C. P. Lee, T. H. Liu, T. F. Lei and S. C. Wu. "Tantalum silicide Schottky contacts to GaAs", J. Appl. Phys., 65, 642 (1989)

            46.      C. P. Lee, T. H. Liu and S. C. Wu, "Compositional dependence of  thermal stability of refractory metal silicide Schottky contacts to GaAs",  J. Electronic Materials, 18, 623 (1989)

            47.      J. S. Wu, C. Y. Chang, C. P. Lee, Y. H. Wang and F. Kai, "Origin of the enhancment of negative differential resistance at low temperatures in double barrier resonant tunneling structures" IEEE Elect. DeviceLett., EDL-10, 301 (1989)

            48.      C. P. Lee, K. H. Chang, D. G. Liu and J. S. Wu, "Periodic flux interruption and sustained two-dimensional growth for molecular beam epitaxy, Electronics Lett., 25, 1659 (1989)

            49.      C. Lin and C. P. Lee, "Comparison of Au/Ni/Ge, Au/Pd/Ge and Au/Pt/Ge ohmic contact to N-type GaAs", J. Appl. Physics, 67, 260 (1990)

            50.       J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu and D. C. Liu,  "Repetition of Negative Differential Resistance in "Vertically integrated DBRTS", J. Appl. Phys., 67, 4383, 1990.

            51.      S. H. Lo and C. P. Lee, “Two dimensional simulation of orientation effects in self-aligned GaAs MESFETs”, IEEE Trans Electron Device, 37, 2130, 1990

            52.       D. G. Liu, C. P. Lee, K. H. Chang, J. S. Wu, and D. C. Liu, “Behavior of the first layer growth in GaAs Molecular Beam Epitaxy”, Appl. Phys. Lett., 57, 1392, 1990

            53.       K. H. Chang, C. P. Lee, J. S. Wu, D. G. Liu, and D. C. Liu, “Influence of Indium doping on AlGaAs layers grown by molecular beam epitaxy”,  Appl. Phys. Lett., 57, 1392, 1990

            54.       D. G. Liu, C. P. Lee, K. H. Chang, J. S. Wu, and D. C. Liu, “Delta-doped quantum well structures grown by molecular beam epitaxy”, Appl. Phys. Lett., 57, 1887, 1990

            55.      D. G. Liu, C. P. Lee, K. H. Chang, J. S. Wu, and D. C. Liou, “Enhanced carrier confinement in delta-doped quantum well structures grown by molecular beam epitaxy”, in Electronic, optical and device properties of layered structures, Proc. of MRS meeting, p.45, Boston 1990

            56.       J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, and D. C. Liou, “Resonant tunneling of electrons from quantized levels in the accumulation layers of double barrier heterostructures, Appl. Phys. Lett.,  57, 2311, 1990

            57.       J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang and D. G. Liu, " Electrical characteristics of double-barrier resonant tunneling structures with differt electrode doping concentrations" Solid State Electron., 34, 403, 1991

            58.       S. H. Lo and C. P. Lee, “Two-dimensioal simulation of drain current transient effect in GaAs MESFETs”, Solid State Electron. 34, 397, 1991

            59.       H. F. Chuang, C. P. Lee, and S. C. Wu, “Molybidenum silicide Schottky contact to GaAs”, J. Materials Science: Electronic Materials, 2, 28, 1991

            60.       J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, and D. G. Liu, “ Improved negative differential resistance for double barrier resonant tunneling devices with two-dimensional source electrons”, J. Appl. Phys., 69, 1122, 1991

            61.       D. G. Liu, D. C. Jin, C. P. Lee, and H. L. Huang, “Analysis of several high electron mobility transistors by a self-consistent method”, Solid State Electronics, 34, 253, 1991

            62.       J. S. Wu, C. Y. Chang, C. P. Lee, K. H. Chang, D. G. Liu, and D. C. Liou, “Characterization of improved AlGaAs/GaAs resonant tunneling heterostructure bipolar transistors”, Japan J. Appl. Phys, 30, L160, 1991

            63.       S. H. Lo and C. P. Lee, “Numerical analysis of the frequency-dependent output conductance of GaAs MESFETs”, IEEE Trans Electron Device, 38, 1693, 1991

            64.       K. H. Chang, C. P. Lee, J. S. Wu, D. G. Liu, D. C. Liou, M. H. Wang, L. J. Chen, and M. A. Marais, “Precise determination of Al content in AlGaAs”, J. Appl. Phys., 80, 4877, 1991

            65.       J. S. Wu, K. H. Chang, C. P. Lee, C. Y. Chang, D. G. Liu, and D. C. Liou, “Quantum effect in the accumulation layer on field-induced photoluminence of double barrier resonant tunneling structures”,  Appl. Phys. Lett., 59, 87, 1991

            66.       S. H. Lo and C. P. Lee, “Numerical analysis of looping effect in the characteristics of GaAs MESFETs”,  IEEE Trans Electron Device, 39, 242, 1992

            67.       K. H. Chang, J. S. Wu, D. G. Liu, D. C. Liou and C. P. Lee, “High quality AlGaAs and high performance AlGaAs devices grown by molecular beam epitaxy at low temperatures”, J. Material Sci., Material in Electronics, 3, 11, 1992

            68.      S. H. Lo and C. P. Lee, “Numerical Analysis of the photoeffect in GaAs MESFETs”, IEEE Trans Electron Device, 39, 1564, 1992

            69.       J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, and D. C. Liou, “Intrinsic and extrinsic effects on performance limitations of GaAs/AlGaAs DBRTS”, Solid State Electron., 35, 723, 1992

            70.       D. G. Liu, K. H. Chang, C. P. Lee, T. M. Hsu, and Y. C. Tien, “Photoreflection study on the surface electric field of delta-doped GaAs grown by MBE”, J. Appl. Phys., 72, 1468, 1992

            71.      D. G. Liu, J. C. Fan, C. P. Lee, T. L. Lee, and L. J. Chen, “Direct observation of Si delta-doped GaAs by transmision electron microscopy”,  Appl. Phys. Lett. 60, 2628, 1992

            72.       D. C. Liou, W. H. Chiang, C. P. Lee, K. H. Chang, D. G. Liu, J. S. Wu, and Y. K. Tu, “A novel process for InGaAs/GaAs strained quantum well lasers”, J. Appl. Phys. 71, 1525, 1992

            73.      S. J. Chang and C. P. Lee, "Numerical simulation of the hysteresis in the sidegating effect in GaAs MESFETs - the effect of Schottky contacts", IEEE Elecon Device Lett. 13, 436, 1992

            74.      C. P. Lee, K. H. Chang and K. L. Tsai, "Quantum well infrared photodetectors with bi-periodic grating couplers", Appl. Phys. Lett., 61, 2437, 1992

            75.      K. L. Tsai, K. H. Chang, C. P. Lee, K. F. Huang, I. Chang, J. C. Fan and D. G. Liu, "Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells", J. Appl. Phys., 72, 2449, 1992

            76.       T. M. Hsu, Y. C. Tien, N. H. Lu, S. P. Tsai, D. G. Liu, and C. P. Lee, "Franz-Keldysh oscillations of delta-doped GaAs", J. Appl. Phys., 72, 1065, 1992

            77.       S. J. Chang and C. P. Lee, "Numerical simulation of sidegating effect in GaAs MESFETs",   IEEE Trans Electron Device, 40, 698, 1993

            78.       D. G. Liu, J. C. Fan, C. P. Lee, K. H. Chang, and D. C. Liou, "Transmission electron microscopy study of heavily delta-doped GaAs grown by MBE", J. Appl. Phys., 73, 608, 1993

            79.       S. J. Chang and C. P. Lee, "Numerical simulation of the supression of sidegating effects in GaAs MESFETs by ion bombardment", Solid State Electron, 36, 1455, 1993

            80.       J. S. Tsang, D. C. Liou, J. M. Tsai, C. P. Lee and F. Y. Juang, "Fundamental mode operation of high power GaInAs/GaAs laser array", J. Appl. Phys., 73, 4706, 1993

            81.       D. C. Liou, C. P. Lee,  C. M. Tsai, J. S. Tsang, T. F. Lei, W. H. Chiang, and Y. K. Tu, " Role of cladding layer thickness on the performance of InGaAs/GaAs strained layer quantum well lasers", J. Appl. Phys., 73, 8027, 1993

            82.       H. R. Chen, C. Y. Chang, K. L. Tsai, J. S. Tsang and C. P. Lee, "Novel AlGaAs/GaAs heterojunction bipolar transistors fabricated by two-stage MBE", Solid State Electron, 36, 485, 1993

            83.       H. R. Chen, C. P. Lee, C. Y. Chang, J. S. Tsang, and K. L. Tsai, "The study of emitter thickness effects on the heterostructure emitter bipolar transistors", J. Appl. Phys., 74, 1398 1993

            84.       K. L. Tsai, K. H. Chang, C. P. Lee, K. F. Huang, J. S. Tsang, "A two color infrared detector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells", Appl. Phys. Lett., 62, 3504, 1993

            85.       H. R. Chen, C. P. Lee, C. Y. Chang, J. S. Tsang, and K. L. Tsai, "Evidence of zero potential spike energy in AlGaAs/GaAs heterostructure emitter bipolar transistors", Japan. J. Appl. Phys., 32, L-1397, 1993

            86.       S. J. Chang and C. P. Lee, "Light-induced sidegating effect in GaAs MESFET's", IEEE Trans. Electron. Device., ED-40, 2186, 1993

            87.       C. P. Lee, C. M. Tsai, J. S. Tsang, "Dual wavelength Bragg reflectors using GaAs/AlAs multilayers", Elecron Lett., 29, 1980, 1993

            88.       J. S. Tsang, C. P. Lee, D. C. Liou, H. R. Chen, K. L. Tsai, and C. M. Tsai, "Investigation of Indium Doping in InGaAs/GaAs/AlGaAs Graded Index Separated Confinement Heterostructure Lasers", J. Appl. Phys., 73, 4706, 1993

            89.      H. R. Chen, C. H. Huang, C. P. Lee, C. Y. Chang, K. L. Tsai, and J. S. Tsang, "Current gains of AlAs/GaAs tunneling emitter bipolar transistors with 25-500Å barrier thickness", Electron. Lett., 29, 1883, 1993

            90.       D. C. Liu, C. P. Lee, K. L. Tsai, and C. M. Tsai, "Modifiction of InGaAs composition by modulation As flux using a valved As cracker", Jap. J. of Applied Physics, 33, 763, 1993

            91.      D. C. Liu and C. P. Lee, "Novel fabrication technique towards quantum dot", Appl. Phys. Lett., 63, 3503, 1993

            92.      S. J. Chang and C. P. Lee, "Numerical Simulation of the Temperature Dependence of Sidegating Effect in GaAs MESFET's", Solid State Electron., 37, 1557, 1994

            93.      H. R. Chen, C. P. Lee, C. Y. Chang, J. S. Tsang, and K. L. Tsai, "High current gain, low offset voltage heterostructure emitter bipolar transistors", IEEE Trans Electron Devices, 15, 336, 1994

            94.      S. T. Yen, C. M. Tsai, C. P. Lee, and D. C. Liu, "Enhancement of electron-wave reflection by superlattices with multiple stacks of multiquantum barriers", Appl. Phys. Lett., 64, 1108, 1994

            95.       H. R. Chen, C. H. Huang, C. P. Lee, C. Y. Chang, K. L. Tsai, and J. S. Tsang, "Current gains of AlAs/GaAs tunneling emitter bipolar transistors with 25-500Å barrier thickness", Electron. Lett., 29, 1883, 1993

            96.       C. P. Lee, C. M. Tsai, J. S. Tsang, "Dual wavelength Bragg reflectors using GaAs/AlAs multilayers", Elecron Lett., 29, 1980, 1993

            97.       K. L. Tsai, C. P. Lee, K. H. Chang, D. C. Liu, H. R. Chen, and J. S. Tsang, "Asymmetric dark current in quantum well infrared photodetectors", Appli. Phys. Lett., 64, 2436, 1994

            98.      S. H. Lo and C. P. Lee, "Analysis of surface state effect on gate lag phenomena in GaAs MESFET's", IEEE Trans. Electron. Device, ED-41, 1504, 1994

            99.      S. T. Yen, C. P. Lee, C. M. Tsai, and H. R. Chen, "Influence of X-valley superlattice on electron blocking by multiquantum barriers", Appl. Phys. Lett., 65, 2720, 1994

          100.     H. R. Chen, C. H. Huang, C. P. Lee, C. Y. Chang, K. L. Tsai, and J. S. Tsang, "Heterojunction bipolar transistors with emitter barrier lowered by delta-doping", IEEE Trans Electron Devices, 15, 286, 1994

          101.     J. S. Tsang, C. P. Lee, K. L. Tsai, and H. R. Chen, "Vertical integration of a GaAs/AlGaAs quantum well laser and a long wavelength quantum well infrared photodetector", Electron Lett., 30, 450, 1994

          102.     K. L. Tsai, C. P. Lee, K. H. Chang, H. R. Chen, and J. S. Tsang, "Influence of oxygen on the performance of GaAs/AlGaAs quantum well infrared photodetectors", J. Appl. Phys., 76, 274, 1994

          103.     K. L. Tsai, C. P. Lee, J. S. Tsang and H. R. Chen, "Two-color quantum well infrared photodetectors with peak sensitivities at 3.9m and 8.1m ", Electronics Lett., 30, 1352, 1994

          104.     J. S. Tsang, C. P. Lee, S. H. Lee, K. L. Tsai and H. R. Chen, "Kinetics of compositional disordering of GaAs/AlGaAs quantum wells by low temperature grown GaAs", J. Appl. Phys., 77, 4302, 1995

          105.     H. F. Chuang, C. P. Lee, and D. C. Liu, "An electrical method to characterize thermal reactions of Pd/GaAs and Ni/GaAs contacts", J. Electron Materials, 24, 767, 1995

          106.     J. S. Tsang, C. P. Lee, J. C. Fan, K. L. Tsai, and H. R. Chen, "Compositional disordering of AlGaAs/GaAs superlattices by low temperature grown GaAs", J. Vac. Sci. Tech., B13(4), 1536, 1995

          107.     K. L. Tsai, C. P. Lee, K. H. Chang, J. S. Tsang, and H. R. Chen, "Two-dimensional bi-periodic grating coupled one- and two-color quantum well infrared photodetectors", IEEE Electron Device Lett. 16, 49, 1995

          108.     J. S. Tsang, C. P. Lee, J. C. Fan, S. H. Lee, and K. L. Tsai, "Effects of low temperature grown GaAs layer on compositional disordering of AlGaAs/GaAs superlattice", Japan J. of Appl. Phys. B2, 34, 1089, 1995

          109.     J. C. Fan, C. P. Lee, J. A. Huang, J. H. Hunag and H. R. Chen, "AlGaAs/GaAs HBTs on Si substrates using epitaxial lift-off", IEEE Electron. Device Lett., 16, 393, 1995

          110.     M. H. Tsai, S. C. Sun, C. P. Lee, H. T. Chiu, C. E. Tsai, S. H. Chuang, and S. C. Wu, "Metal-organic chemical vapor deposition of tantalum nitride barrier layers for ULSI applications" Thin Solid Film, 270, 531, 1995

          111.     C. P. Lee and D. C. Liu, "High quality quantum dots fabricated by molecular beam epitaxy", Applied Surface Science, 92, 519, 1995

          112.     K. L. Tsai, C. P. Lee, K. H. Chang, H. R. Chen, and J. S. Tsang, "The effect of tunnel barrier thickness on the responsivity of double barrier quantum well infrared photodetectors", Solid State Electron., 39, 201, 1996

          113.     S. H. Lo and C. P. Lee, "Numerical study of frequency dispersion of transconductance in GaAs MESFETs", IEEE Trans. Electron Device, 43, 213, 1996

          114.     S. T. Yen and C. P. Lee, "Theoretical investigation of semiconductor lasers with passive waveguides", IEEE J. of Quantum Electron., 32, 4. 1996

          115.     T. C. Chang, M. Y. Hsu, C. Y. Chang, C. P. Lee, T. G. Jung, W. C. Tsai, G. W. Huang, L. P. Chen, and Y. J. Mei, "Electroluminescence from the porous boron doped Si superlattice", ICSFS-1994, also in Applied Surface Science, 92, 571, 1996

          116.     S. J. Chang and C. P. Lee, “Numerical analysis of the transient behavior of the sidegating effect in GaAs MESFETs”, Solid State Electron., 39, 1015, 1996

          117.     G. Lin, S. T. Yen, C. P. Lee and D. C. Liu, “Extremely small vertical far-field angle of InGaAs-AlGaAs quantum well lasers with specially designed cladding structures” IEEE Photon Tech Lett., 8, 1588, 1996

          118.     S. T. Yen and C. P. Lee, “Semiconductor lasers with unconventional cladding structures for small beam divergence and low threshold current”, Optical and Quantum Electron., 28, 1229, 1996

          119.     H. H. Tung and C. P. Lee, "A energy bandpass filter using superlattice structures", IEEE J. of Quantum Electron., 32, 507, 1996

          120.     J. S. Tsang, C. P. Lee, K. L. Tsai, C. M. Tsai and J. C. Fan, "Compositional disordering of GaInAs/GaAs heterostructures using low temperature grown GaAs layers", J. of Appl. Phys., 79, 664, 1996

          121.     H. H. Tung and C. P. Lee, "Numerical calculation of electron wavepacket tunneling time through an energy band-pass filter", IEEE J.Quantum Electron, 12, 2122, 1996

          122.     S. T. Yen and C. P. Lee, "Novel cladding design for low beam divergernce and low threshold current semiconductors" IEEE J. Quantum Electronics, 32, 1588, 1996

          123.     H. F. Chuang, C. P. Lee, J. S. Tsang, and J. C. Fan, "Thermal reactions of Pd/Al1-xGaxAs contacts", J. Appl. Physics, 80, 2891, 1996

          124.     J. C. Chiang, S. S. Li, M. Z. Tidrow, P. Ho, C. M. Tsai, and C. P. Lee, “A voltage-tunable multicolor triple-coupled InGaAs/GaAs/AlGaAs quantum well infrared photodetector for 8-12 um detection” Appl. Phys. Lett., 69, 2412, 1996

          125.     S. T. Yen and C. P. Lee, “Theoretical analysis of 630nm GaInP/AlGaInP strained quantum well lasers considering continuum states”, IEEE J. Quantum Electron, 33, 443, 1997

          126.     H. H. Tung and C. P. Lee, “Design of a resonant-cavity-enhanced photodetector for high speed applications”, IEEE J. Quantum Electron, 33, 753, 1997

          127.     D. G. Liu, and C. P. Lee, “Simulation and analysis of the capacitance-voltage characteristics of the delta –doped semiconductors”, Materials Chemistry & Physics, 50, 200, 1997

          128.     S. H. Lee, C. F. Jou, C. P. Lee, C. C. Hu, “Varactor-tuned Gunn diode voltage controlled oscillator antenna array”, Intl. J of Infrd and Mill Waves, 8: (10) 2001-2017 Oct 1997

          129.     S. T. Yen and C. P. Lee, “Effect of doping in active region of 630 nm band GaInP-AlGaInP tensile-strained quantum well lasers, IEEE J. Quantum Electron, 34, 1644, 1998

          130.     H. H. Tung and C. P. Lee, “Quantum mechanical calculations of resonant semiconductor devices: A QMWI approach”, International J. High Speed Electronics, 8, 685, 1997

          131.     C. M. Tsai and C. P. Lee, “Reflection type normally-on two wavelength modulator”, Electron Lett., 33, 611, 1997

          132.     C. M. Tsai and C. P. Lee, “Reflection type normally-on two-wavelength modulator with balanced cavity design”, July, IEEE Photon Tech. Lett., 1997

          133.     J.C.Fan, K.Y.Chen, Gray Lin and C.P.Lee, “Stripe-Geometry GaAs-InGaAs Laser diode with Back-side Contact on Silicion by Epitaxial Lift-Off”, Electron Lett., 33, 1095, 1997

          134.     H. F. Chuang, C. P. Lee, C. M. Tsai, D. C. Liu, J. S. Tsang, and J. C. Fan, “Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies” J. Applied Physics, 83, 366, 1998

          135.     S. Y. Wang and C. P. Lee, “Doping Effect on Normal Incident InGaAs/GaAs Long-Wavelength Quantum Well Infrared Photodetectors”, J. Appl. Phys., 82, 2680, 1997

          136.     S. Y. Wang and C. P. Lee, “Normal Incident InGaAs/GaAs Long-Wavelength Quantum Well Infrared Photodetectors”, Appl. Phys. Lett., 71, 119, 1997

          137.     C. M. Tsai and C. P. Lee, “Cavity designs for reflection type two-wavelength modulators”, Optical and Quantum Electronics, 29, 739, 1997

          138.     S. T. Yen and C. P. Lee, “Effect of doping in active region of 630 nm band GaInP-AlGaInP tensile-strained quantum well lasers, IEEE J. Quantum Electron, 34, 1644, 1998.

          139.     J. C. Fan, C. P. Lee, C. M. Tsai, S. Y. Wang, and J. S. Tsang, “Optical and structural properties of epitaxially lifted-off GaAs films” J. of Applied Physics, 83, 466, 1998

          140.     S. H. Lee, C. K. Jou, C. P. Lee, C. C. Hu, J. J. Wu, “A Gunn-diode active leaky-wave frequency scanning antenna” Intl. J. Infrd and Mill Waves, 19: (1) 149-163 Jan 1998

          141.     C. M. Tsai and C. P. Lee, “High performance Two wavelength asymmetric Fabry-Perot modulators with decoupled cavity design”, IEEE J. Quantum Electron., 34, 427, 1998

          142.     F. Y. Tsai and C. P. Lee, “InGaAs/GaAs quantum dots on (111)B GaAs substrates”, J. Appl. Physics, 84, 2624, 1998

          143.     C. H. Lee, Y. H. Chang, H. H. Lin, and C. P. Lee, “Formation of D- centers in GaAs/AlGaAs quantum wells”, Chinese Journal of Physics, 36, 519, 1998

          144.     J. C. Fan, C. M. Tsai, K. Y. Chen, S. Y. Wang, Gray Lin and C. P. Lee, “Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate”, J. Electron Material., 27, 110, 1998

          145.     F. Y. Tsai and C. P. Lee, “Photoluminescence study of high quality InGaAs/GaAs quantum dots on (111)B substrates”, Jpn, J. Appl. Phys., 38, 558, 1999

          146.     A. Voskoboynikov, S. H. Liu and C. P. Lee, “Spin dependent electronic tunneling at zero magnetic field”, Physics Rev. B, 58, 15397, 1998

          147.     A. Voskoboynikov, S. H. Liu and C. P. Lee, “Spin dependent tunneling in double-barrier heterostructures”, Physics Review (B), 59, 12514, 1999

          148.     K. W. Sun, T. S. Song, C. K. Sun, J. C. Wang, S. Y. Wang and C. P. Lee, “Ultrafast carrier-carrier scattering in AlGaAs/GaAs quantum wells”, Physica B, 272, 387, 1999

          149.     H. H. Cheng, R. J. Nicholas, A. Priest, F. Y. Tsai, C. P. Lee and J. Sanchez-Dehesa, “Megneto-luminescence of quasi-zero dimensional InGaAs/GaAs quantum dots”, Physica B, 256-258, p.178, 1998

          150.     S. W. Chiou, C. P. Lee, J. M. Hong, C. M. Chen, and Y. Tsou, “Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces”, J. Crystal Growth, 206, 166, 1999

          151.     J. X. Shen, Y. Oka, H. H. Cheng, F. Y. Tsai, and C. P. Lee. “Exciton relaxation in GaInAs/GaAs quantum dots”, Superlattice and Microstructures, 25, 131, 1999

          152.     F. Y. Tsai, C. P. Lee, J. Shen, Y. Oka, and H. H. Cheng, “Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates”, Microelectronics Journal, 30, 367, 1999

          153.     N. L. Wang, B. Lin, H. F. Chau, G. Jackson, Z. Chen, and C. P. Lee, “Advanced HBT technology for wireless communications”, Solid State Electron. 43, 1399, 1999

          154.     S. W. Chiou, C. P. Lee, C. K. Huang, and C. W. Chen, “Wide angle bragg reflector for 590nm AlGaInP light emitting diodes”, J. Appl. Physics, 87, 2052, 2000

          155.     A. Voskoboynikov, S. H. Liu and C. P. Lee, “Spin-polarized electronic current in resonant tunneling heterosturctures”, J. Appl. Physics, 87, 387, 2000

          156.     A. Voskoboynikov, S. H. Liu and C. P. Lee, “Spin-dependent delay time in electronic resonant tunneling at zero magnetic field”, Solid State Comm., 115: (9) 477-481, 2000

          157.     S. Y. Wang and C. P. Lee, “Non-uniform quantum well infrared photodetectors”, J. Appl. Physics, 87, 522, 2000

          158.     K. W. Sun, T. S. Song, C. K. Sun, J. C. Wang, M. G. Kane, S. Y. Wang and C. P. Lee, “Carrier carrier scattering in GaAs/AlGaAs quantum wells”, Phys. Rev. B, 61, 15592, 2000

          159.     Y. W. Suen, C. C. Young, C. J. Chang, J. C. Wu, S. Y. Wang, and C. P. Lee, “A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well”, Physica E, 6: (1-4) 331-334, 2000

          160.     K. W. Sun, T. S. Song, S. Y. Wang and C. P. Lee, “Nonthermal carrier dynamics in AlGaAs/GaAs quantum wells”, Microelectronics Engineering, 51-2, 189, 2000

          161.     S. L., Tyan, P. A. Shields, R. J. Nicholas, F. Y. Tsai, and C. P.Lee, “Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrates”, Jpn. J. of Appl. Phys., 39, 3286, 2000

          162.     K. W. Sun, C. M. Wang, H. Y. Chang, S. Y. Wang and C. P. Lee, “Optical phonon emission in GaAs/AlAs and GaAs/AlGaAs multiple quantum well structures”, J. of Luminescence, 92, 145 2000

          163.     K. W. Sun, H. Y. Chang, C. M. Wang, T. S. Song, S. Y. Wang and C. P. Lee, “Raman and hot electron neutral acceptor luminescence studies of electron optical phonon interactions in GaAs/AlGaAs quantum wells”, Solid State Comm. 115, 563, 2000

          164.     K. W. Sun, C. K. Sun, J. C. Wang, S. Y. Wang and C. P. Lee, “Carrier-carrier scattering: an experimental comparison of 5 and 3 nm AlGaAs/GaAs quantum wells”, Solid State Comm., 115, 329, 2000

          165.     K. W. Sun, H. Y. Chang, C. M. Wang, S. Y. Wang, and C. P. Lee, “Hot-electron relaxation via optical phonon emissions in GaAs/AlxGa1-xAs quantum well structures: dependence upon the alloy composition and barrier width”, NANOTECHNOLOGY 11: (4) 227-232 Dec 2000

          166.     S. Y. Wang, S. D. Lin, H. W. Wu and C. P. Lee, “Low dark current quantum dot infrared photodetectors with an AlGaAs current blocking layer”, Appl. Phys. Lett., 78, 1023, 2001

          167.     V. Ilchenko, S. D. Lin, C. P. Lee and O. Tretyak, “DLTS characterization of InAs self-assembled quantum dots”, J. Appl. Physics, 89, 1172, 2001

          168.     O. Voskoboynikov, C. P. Lee and O. Tretyak, “Spin-orbit splitting in semiconductor quantum dots with parabolic potential confinement”, Phys. Rev. B 6316: (16) 5306-+ APR 15 2001

          169.     F. Y. Tsai, C. P. Lee, H. H. Cheng, J. Shen, and Y. Oka, “Time resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields”, J. Appl. Phys., 89, 7875, 2001

          170.     O. Voskoboynikov, C. P. Lee and O. Tretyak, “Spin-orbit interaction and energy states in semiconductor quantum dots”, Physica E, 10, 107-111, 2001

          171.     S. W. Chiu, G. Lin, C. P. Lee, Y. S. Su, H. P. Yang and C. P. Sung, “Mode control of vetical cavity lasers by Germanium coating”, Jpn J Appl Phys 1 40: (2A) 614-616, 2001.

          172.     S. Y. Tyan, Y. G. Lin, F. Y. Tsai and C. P. Lee, “InGaAs/GaAs quantum wells and quantum dots on (111)B orientation”, Solid State Comm 117: (11) 649-654 2001

          173.     C.R. Lu, S. F. Lou, H. H. Cheng, C. P. Lee, S. Y. Tsai, “Electrooptical properties of InGaAs/GaAs strained single quantum wells”, Jap. J. Appl. Phys. 39, 351 (2001)

          174.     J. L Liu, O. Voskoboynikov, Y. Li, C. P. Lee and S. M. Sze, “Electron energy level calculations for cylindrical narrow gap semiconductor quantum dots”, submitted to Computer Physics Communications

          175.     O. Voskoboynikov, C. P. Lee and O. Tretyak, “ Spin-orbit energy level splitting in semiconductor cylindrical and spherical quantum dots”, Physica Status Solidi,(b) 226, 175, 2001

          176.     O. Voskoboynikov, H. C. Huang, C. F. Shi, and C. P. Lee, “Electron energy state spin-orbit splitting in nano-scopic quantum rings”, Solid State Communications, 119, 59, 2001

          177.     C. H. Lee, Y. H. Chang, C. F. Huang, M. Y. Huang, H. H. Lin, and C. P. Lee, “Transport and optical studies of the D--conduction band in doped GaAs/AlGaAs quantum wells”, Chinese J. Phys., 39, 363, 2001

          178.     J. L. Liu, O. Voskoboynikov, Y. Li, C. P. Lee and S. M. Sze, “Energy and coordinate dependenct effective mass and confined electron states in quantum dots”, J. of Physics: Condensed Matter (submitted)

          179.     S. Y. Wang, Y. C. Chin, and C. P. Lee, “A detailed study of non-uniform quantum well infrared photodetectors”, Infrared Phys. Tech., 42, 177, 2001

          180.     S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer”, Infrared Phys. Tech., 42, 473, 2001

          181.     Y. Li, O. Voskoboynikov, C. P. Lee, S. M. Sze, and O. Tretyak, “Electron energy state dependence on the shape and size of semiconductor quantum dots”, J. Appl. Phys, 90, 6416, 2001

          182.     C. E. Huang, C. P. Lee, R. T. Huang, and M. C. Chang, “Comparison of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs pseudomorphic high electron mobility transistors”, Jpn. J. Appl. Phys., 40, 6761, 2001

          183.     Yiming Li, O.Voskoboynikov, C.P.Lee, S.M.Sze, “Electron energy level calculations for cylindrical narrow gap semiconductor quantum dots”, Computer Physics Cumminication, 140, 399, 2001

          184.     Yiming Li, O.Voskoboynikov, C.P.Lee, S.M.Sze, “Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots”, Computer Physics Communications, 141, 66, 2001

          185.     S. D. Lin and C. P. Lee, “Hole Schottky barrier height enhancement and its application to metal semiconductor metal photodetectors”, J. Appl. Phys., 90, 5666, 2001

          186.     Yiming Li, O.Voskoboynikov, C.P.Lee, and S.M.Sze, “Energy and coordinate dependent effective mass and confinement electron states in quantum dots”, Solid State Communications, 120, 79, 2001.

          187.     Chiou SW, Lee CP, Yang HP, Sung CP. Control the transverse mode of vertical cavity surface emitting lasers by anti-reflection coating. Proceedings of Spie - the International Society for Optical Engineering, vol.4286, 2001

          188.     S. D. Lin, H. C. Lee, K. W. Sun and C. P. Lee, “Investigation of electron-optical phonon interactions in moderate wide InxGa1-xAs/GaAs strained quantum wells”, J. Luminescence 94, 761-766 DEC 2001

          189.     G. Lin and C. P. Lee, “Comparison of 1300 nm Quantum Well Lasers using Different Material Systems”, Optical and Quantum Electronics, 34(12): 1191-1200, 2002

          190.     C. H. Liao, C. P. Lee, N. L. Wang and B. Lin, “Optimum design for a thermally stable multi-finger power transistor”, IEEE Trans. Electron Device, 49, 902, 2002

          191.     C. H. Liao, C. P. Lee, “Optimum Design for a Thermally Stable Multi-finger Power Transistor with Temperature dependent thermal conductivity”, IEEE Trans. Electron Device, 49, 909, 2002

          192.     O. Voskoboynikov, H. C. Huang, C. P. Lee, and O. Tretyak, “Spin dependent electron scattering from quantum dots and antidots in two-dimensional channels”, Physica A, 12, 252, 2002.

          193.     Lin SD, Lee CP “GaAs metal-semiconductor-metal photodetectors with low dark current and high responsivity at 850 nm”SEMICOND SCI TECH 17 (12): 1261-1266 DEC 2002

          194.     Yiming Li, O.Voskoboynikov, C.P.Lee, S.M.Sze, and O. Tretyak, “Electron energy state splitting in 3D cylindrical semiconductor quantum dots”, European Physical Journal, 28, 475, 2002

          195.     Yiming Li, O.Voskoboynikov, C.P.Lee, S.M.Sze, and O. Tretyak, “A computional method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots”, J. of Modern Physics C, 13, 453, 2002

          196.     G. Lin and C. P. Lee, “Two-dimensional field Analysis of Semiconductor Lasers with Small Vertical Beam Divergence”, Optical and Quantum Electronics, 34(7): 661-675, 2002

          197.     C. E. Huang, C. P. Lee, H. C. Liang, R. T. Huang, “Critical Spacing between Emitter and Base in InGaP Heterojunction Bipolar Transistor” IEEE ELECTR DEVICE L 23 (10): 576-578, 2002

          198.     Y. Li, O. Voskoboynikov, C. P. Lee, S. M. Sze and O. Tretyak, “Effect of shape and size on electron transition energies of InAs semiconductor quantum dots”, Jpn. J. Appl. Phys., 41, 2698, 2002

          199.     Y. Li, O. Voskoboynikov, C.P. Lee, SM Sze. “Calculation of induced electron states in three-dimensional semiconductor artificial molecules.” Elsevier. Computer Physics Communications, vol.147, no.1-2, 1 Aug. 2002, pp.209-13.

          200.     Li Y, Voskoboynikov, Lee CP, Sze' SM, Tretyak O. Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots. European Physical Journal B, vol.28, no.4, Aug. 2002, pp.475-81.

          201.     B. C. Lee, S. D. Lin, C. P. Lee, H. M. Lee, J. C. Wu and K. W. Sun, “Selective growth of single quantum dot using strain engineering”, Appl. Phys. Lett., 80, 326, 2002

          202.     C. C. Chen, H. C. Chen, M. C. Hsu, W. H. Hsieh, C. H. Kuan, S. Y. Wang, and C. P. Lee, “Performance and application of a superlattice infrared photodetector with a blocking barrier”, J. Appl. Phys., 91, 943, 2002

          203.     H. C. Lee, C. W. Sun and C. P. Lee, “Structure effects on electron-optical phonon interaction in GaAs/AlxGa1-xAs quantum wells”, J. Appl. Phys. 92, 268 (2002)

          204.     C. C. Chen, H. C. Chen, C. H. Kuan, S. D. Lin, and C. P. Lee, “Multicolor infrared detector realized with two distinct superlattices separated by a blocking barrier”, Appl. Phys. Lett., 13, 2251, 2002

          205.     O. Voskoboynikov, Y. Li, H. M. Lu, C. F. Shih, and C. P. Lee, “Energy states and magnetization in nanoscale quantum rings”, Phys. Rev. B. 66, 155306, 2002

          206.     S. D. Lin, C. P. Lee, W. H. Hsieh, Y. W. Suen, “Self-assembled GaAs antiwires in In_0.53Ga _0.47As matrix on (100) InP substrates”, Appl. Phys. Lett,  81, 3007 (2002)

          207.     G. Lin and C. P. Lee, “Comparison of 1300 nm quantum well lasers using different material systems”, OPT QUANT ELECTRON 34 (12): 1191-1200 DEC 2002

          208.     K. W. Sun, J. C. Wu, B. C. Lee, and C. P. Lee. “Selective growth and photoluminescence studies of InAs self-organized quantum dot arrays on patterned GaAs(001) substrates” NANOTECHNOLOGY 13 (5): 576-580 OCT 2002

          209.     C. C. Chen, H. C. Chen, W. H. Hsieh, C. H. Kuan, S. Y. Wang, and C. P. Lee, “Relaxation mechanisms of the photoelectrons in the second miniband of a superlattice structure”, IEEE J. Quantum Electronics, 39, 306, 2003

          210.     E. Chen, O. Voskoboynikov, C. P. Lee, “Spin-dependent electron single and double scattering from quantum dots and antidotes”, Solid State Communications, 125, 381, 2003

211.     S. D. Lin and C. P. Lee, “Tunneling through InAs quantum dots in AlGaAs/GaAs double barriers resonant tunneling diodes with InGaAs quantum well emitters” J. Appl. Phys. 93, 2952 (2003)

212.     C. C. Lee, S. D. Lin, C. P. Lee, M. S. Yeh, W.I. Lee¹and C. T. Kuo,” Thermal Stability of Plasma-treated Ohmic Contacts to n-GaN”, Jpn J. Appl. Phys. 1 42 (4B): 2313-2315 APR 2003

          213.     K. Y. Huang, Y. Li, and C. P. Lee, “A time domain approach to simulation and characterization of RF HBT two-tone intermodulation distortion”, IEEE T MICROW THEORY AND TECHNOLOGY　51 (10): 2055-2062 OCT 2003

          214.     O. Voskoboynikov, C. P. Lee, “Spin-orbit interaction and all-semiconductor spintronics”
J SUPERCOND 16 (2): 361-363 APR 2003

          215.     C. F. Huang, Y. H. Chang, H. H. Cheng, Z. P. Yang, S. Y. Wang, H. D. Yeh, H. T. Chou, C. P. Lee, G. J. Hwang, “On the equivalence between magnetic-field-induced phase transitions in the integer quantum Hall effect”, SOLID STATE COMMUNICATIONS 126 (4): 197-201 APR 2003

          216.     H. C. Huang, O. Voskoboynikov, and C. P. Lee, “Spin-orbit interaction and electron elastic scattering from impurities in quantum wells”, PHYS REV B 67 (19): Art. No. 195337 MAY 15 2003

          217.     H. C. Huang, O. Voskoboynikov, and C. P. Lee, “Role of the spin-orbit interaction in elastic scattering of electrons in quantum wells”, MICROELECTR J 34 (5-8): 687-690 MAY-AUG 2003

          218.     Y. M. Li, H. M. Lu, O. Voskoboynikov, and C. P. Lee, “Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings”, SURF SCI 532: 811-815 JUN 10 2003

          219.     H. C. Lee, K. W. Sun, and C. P. Lee, “Significance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wells”, SOLID STATE COMMUN 128 (6-7): 245-250 NOV 2003

          220.     O. Voskoboynikov, O. Bauga, and C. P. Lee, “Magnetic properties of parabolic quantum dots in the presence of the spin-orbit interaction”, J APPL PHYS 94 (9): 5891-5895 NOV 1 2003

          221.     R. C. Tu, C. C. Chuo, S. M. Pan, Y. M. Fan, C. E. Tsai, T. C. Wang, C. I. Tun, G. C. Chi, B. C. Lee, and C. P. Lee, “Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers”, APPLIED PHYSICS LETTERS , 83 (17): 3608-3610 OCT 27 2003

          222.     C. C. Lee, C. P. Lee, M. H. Yeh, “Low resistance Ohmic contacts to n-GaN by Ar plasma and forming gas ambient treatments”, J VAC SCI TECHNOL B 21 (4): 1501-1504 JUL-AUG 2003

          223.     S. Y. Wang, S. C. Chen, S. D. Lin, and C. P. Lee, “InAs/GaAs quantum dot infrared photodetectors with different growth temperatures”, INFRARED PHYS TECHN 44 (5-6): 527-532 OCT-DEC 2003

224.     V. V. Ilchenko, S. D. Lin, C. P. Lee, O. V. Tretyak and M. V. Shkil, “Deep level transient spectroscopy evidence of point defects associated with InAs/GaAs quantum dots”, Functional Materials 10(4), 1 (2003).

          225.     Tu RC, Chuo CC, Pan SM, Fan YM, Tsai CE, Wang TC, Tun CJ, Chi GC, Lee BC, Lee CP, “Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers”, APPLIED PHYSICS LETTERS 83 (17): 3608-3610 OCT 27 2003

          226.     O. Voskoboynikov and C. P. Lee, “Magnetization and magnetic susceptibility of InAs nano-rings”, PHYSICA E 20 (3-4): 278-281 JAN 2004

227.     H. C. Huang, O. Voskoboynikov, and C. P. Lee, “Spin-dependent Hall effect in semiconductor quantum wells”, J APPL PHYS 95 (4): 1918-1923 FEB 15 2004

228.     W. H. Hsieh, C. H. Kuan, Y. W. Suen, S. Y. Chang, L. C. Li, B. C. Lee, and C. P. Lee, “High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems”. Applied Physics Letters, vol.85, no.18, 1 Nov. 2004, pp.4196-8

229.     B. C. Lee, O. Voskoboynikov, and C. P. Lee, “III-V semiconductor nano rings”, Physica E (24) 84-91, 2004

230.     S. T. Yen, V. N. Tulupenko, E. S. Cheng, P. K. Chung, C. P. Lee, T. K. Dalakyan, K. A. Chao,. “Evidence for capture of holes into resonant states in boron-doped silicon”. Journal of Applied Physics, vol.96, no.9, 1 Nov. 2004, pp.4970-5.

231.     Lee BC, Lee CP, “Formation of semiconductor quantum rings using GaAs/AlAs partially capped layers” NANOTECHNOLOGY 15 (7): 848-850 JUL 2004

232.     Lee CC, Shih CF, Lee CP, Tu RC, Chuo CC, Chi J, “Temperature-dependent electron transport properties of AlGaN/GaN heterostructures” JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 (6A): L740-L742 JUN 1 2004

233.     Tu RC, Tun CJ, Chuo CC, Lee BC, Tsai CE, Wang TC, Chi J, Lee CP, Chi GC, “Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition”, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 43 (2B): L264-L266 FEB 15 2004

234.     Huang KY, Li YM, Lee CP, ‘Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models”, MICROELECTRONIC ENGINEERING 75 (2): 137-144 AUG 2004

235.     Hsu CH, Tang MT, Lee HY, Huang CM, Liang KS, Lin SD, Lin ZC, Lee CP, “Composition determination of semiconductor quantum wires by X-ray scattering”, PHYSICA B-CONDENSED MATTER 357 (1-2): 6-10 FEB 28 2005

236.     S. D. Lin and C. P. Lee, “Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate.”, Physica E. 25, 335, 2005

237.     O. Voskoboynikov, C. M. J. Wijers, J. L. Liu and C. P. Lee, “Interband magneto-optical transitions in a layer of semiconductor nano-rings”, Europhys. Lett. (2005), DOI: 10.1209/epl/i2004-10516-7

238.     Jiun Haw Chu, O. Voskoboynikov, C.P. Lee, “Slow light in photonic crystals”, Microelectronics Journal 36 (2005) 282–284

          239.     K.W.Sun, J.W.Chen, B. C. Lee, C. P. Lee and A. M. Kechiantz’ “Carrier capture and relaxation in InAs quantum dots”, Nanotechnology 16 (2005) 1530–1535

240.     O. Voskoboynikov, C. M. J. Wijers, J. L. Liu and C. P. Lee, “Magneto-optical response of layers of semiconductor quantum dots and nanorings”, PHYSICAL REVIEW B 71, 245332 _2005

241.     H. Niu, CH Chen, HY Wang, S. C. Wu and C. P. Lee, “Ion-channeling studies of InAs/GaAs quantum dots”, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS, 241 (1-4): 470-474 DEC 2005

242.     Lin YG, Wu CH, Tyan SL, S. D. Lin and C. P. Lee, “Photoluminescence of ultra small InAs/GaAs quantum dots”, MODERN PHYSICS LETTERS B 19 (18): 907-917 AUG 10 2005

243.     Sun KW, Huang SC, Kechiantz A, and C. P. Lee, “Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method” OPTICAL AND QUANTUM ELECTRONICS 37 (4): 425-432 MAR 2005

          244.     C. P. Lee, H. F. Chau, W. Ma, and N. L. Wang, ”The safe operating area of GaAs based heterujunction bipolar transistors”, IEEE Trans Electron Devices, Volume 53, Issue 11, Nov. 2006 Page(s): 2681 - 2688

245.     S. D. Lin, Z. C. Lin, C. P. Lee, “Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy”, J. Appl. Phy. 100, 054312 (Sept. 2006).

246.     O. Voskoboynikov, C. M. J. Wijers, J. L. Liu and C. P. Lee, “Magneto-optics of layers of semiconductor quantum dots and nano rings”, Brazilian J. of Physics, 36, 383, 2006

247.     K. W. Sun, A. Kechintz, B. C. Lee and C. P. Lee, “Ultra fast carrier capture and relaxation in modulation doped InAs quantum dots”, Appl. Phys. Lett., 88, 163117 (2006)

248.     Z. C. Lin, C. Y. Lu and C. P. Lee, “Self assembled InAs quantum wire lasers”, Semiconductor Science and Technology, 21, 1221-1223, 2006

249.     H. Y. Wang, C. P. Lee, H. Niu, C. H. Chen and S. C. Wu, “Strain study of self assembled InAs quantum dots by ion channeling technique”, J. Applied Physics, 100, 103502, 2006

250.     C. Y. Cheng, H. Niu, C. H. Chen, H. Y. Wang and C. P. Lee, „Effect of proton irradiation on photoluminescence emission from self-assembled InAs/GaAs quantum dots“, Nuclear Instruments and Methods in Physics Research B, vol.261, 1171, 2007

251.   Hsing-Yeh Wang,  Hsu-Chieh Cheng,  Sheng-Di  Lin, and Chien-Ping Lee ”Wavelength switching transition in quantum dot lasers” APPLIED PHYSICS LETTERS, 90 (8) 081112 (2007)

          252.     S. D. Lin1, C. P. Lee1, V. V. Ilchenko2, D. I. Shetka2 , O. V. Tretyak2, A. M. Korol3, I. V. Nosenko3, “COHERENT TUNNELING IN A SEMICONDUCTOR SYSTEM:DOUBLE BARRIER RESONANT-TUNNELING STRUCTURE BUILT IN THE SCHOTTKY BARRIER” JOURNAL OF PHYSICAL STUDIESv. 11, No. 3 (2007) p. 294_297

253.   Z. C. Lin,  W. H. Hsieh, C. P. Lee, and Y. W. Suen, ”Mobility asymmetry in InGaAs/InAlAs heterostructures with InAs quantum wires” NANOTECHNOLOGY, 18 (7)  075403 (2007)

          254.     S. C. Huang, T. H. Yang, C. P. Lee and S. D. Lin, “Electrically driven integrated photonic crystal nanocavty surface emitting lasers”, Appl. Phys. Lett., 90, 151121, 2007

          255.     S. Y. Wang, M. C. Lo, H. Y. Hsiao, H. S. Ling and C. P. Lee, “Temperature dependent responsivity of quantum dot infrared photodetectors”, Infrared Physics and Technology, 50, 166, 2007

          256.     S. C. Huang,  M. Kato,  E. Kuramochi,  C. P. Lee, and  M. Notomi ”Time-domain and spectral-domain investigation of inflection-point slow-light modes in photonic crystal coupled waveguides” OPTICS EXPRESS, 15 (6) 3543 (2007)

          257.     M. C. Lo, S. J. Huang, C. P. Lee, S. D. Lin and S. T. Yen, “discrete monolayer light emission from GaSb wetting layer in GaAs”, Appl. Phys. Lett. 90, 243102, 2007

          258.     C. P. Lee, N. L. Wang and W. Ma, “Averaging and cancellation effect in high order nonlinearity of a power amplifier”, IEEE Trans. Circuit and System, 54, 2733, Dec, 2007

          259.     Ling HS, Lee CP, “Evolution of self-assembled InAs quantum ring formation”, J. Appl. Physics. 102 (2): Art. No. 024314 JUL 15 2007

          260.     C. P. Lee, F. Chau, B. Lin M. Kretschmar, W. Ma, “A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors”, J. Appl. Physics., 103, 094512, May 2008

          261.     Lin ZC, Lin SD, Lee CP  “Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (100) InP substrates”, PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   Volume: 40   Issue: 3   Pages: 512-515 : JAN 2008

          262.     H. Niu^{a, ,} , C.H. Chen^b, H.Y. Wang^c, S.C. Wu^b and C.P. Lee, “Ion beam studies of InAs/GaAs quantum dots after annealing”, Nuclear Instruments and Methods Volume 266, Issue 8, April 2008, Pages 1235-1237

          263.     WH Hsieh, YW Suen, BC Lee, LC Li, CP Lee “Edge magnetoplasma excitations in quantum wire arrays”, Physica E-Low dimensional systems and nanostructures, 40, 1430, 2008

          264.     “Type I/type II excitons in strained Si/SiGe multi-quanum wells”, Physica E-Low dimensional systems and nanostructures, 40, 1681, 2008

          265.     C. P. Lee, N. L. Wang and W. Ma, “Averaging and cancellation effect in high order nonlinearity of a power amplifier”, IEEE Trans. Circuit and System, 54, 2733, Dec, 2007

          266.     HC Lee, KW Sun, CP Lee” Effect of double heterojunctions on the plasmon–phonon coupling in a GaAs/Al 0.24 Ga 0.76 As quantum well” Semiconductor Science and Technology, 23, 125043, 2008

          267.     H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer “, Appl. Phys. Lett., 92, 193506 (2008)

          268.     H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “Long wavelength quantum dot infrared photodetectors with operating temperature over 200K”, IEEE Photon Tech Lett., 21, 118, 2009

          269.     HS Ling, SY Wang, CP Lee, “Characteristics of In (Ga) As quantum ring infrared photodetectors”, J. Appl. Phys. 105, 034504 (2009);

                270. Lin TC, Lin CH, Ling HS, Fu YJ, Chang WH, Lin SD, Lee CP, “Impacts of structural asymmetry on the magnetic response of excitons and biexcitons in single self-assembled In(Ga)As quantum rings”, PHYSICAL REVIEW B    Volume: 80    Issue: 8  Article Number: 081304    Published: AUG 2009  

          271.     Lin CH, Lin HS, Huang CC, Su SK, Lin SD, Sun KW, Lee CP, Liu YK, Yang MD, Shen JL, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring”, APPLIED PHYSICS LETTERS    Volume: 94    Issue: 18  Article Number: 183101    Published: MAY 4 2009

          272.     S.Y. Wang^a, , H.S. Ling^b, M.C. Lo^b and C.P. Lee, “Detection wavelength and device performance tuning of InAs QDIPs with thin AlGaAs layers”, Infrared Physics & Technology
Volume 52, Issue 6, November 2009, Pages 264-267

          273.     C. H. Lin, H. S. Ling, S. K. Su, S. D. Lin, C. P. Lee, and K. W. Sun, “Shape dependent carrier dynamics in InAs/GaAs nanostructures”, JOURNAL OF APPLIED PHYSICS 106, 113522 _2009_

          274.     H.S. Ling^a, , S.Y. Wang^b, C.P. Lee^a and M.C. Lo, “Confinement-enhanced dots-in-a-well QDIPs with operating temperature over 200 K”, Infrared Physics & Technology Volume 52, Issue 6, November 2009, Pages 281-284

          275.     Lo MC, Wang SY, Ling HS, Lee CP  “Vertically Coupled Quantum-Dot Infrared Photodetectors”
IEEE PHOTONICS TECHNOLOGY LETTERS   Volume: 22   Issue: 11   Pages: 796-798  JUN 1 2010

          276.     W. H. Chang, C. H. Lin, Y. J. Fu, , T. C. Lin, H. Lin, S. J. Cheng, S. D. Lin, and C. P. Lee, “Impacts of Coulomb Interactions on the Magnetic Responses of Excitonic Complexes in Single Semiconductor Nanostructures” NANOSCALE RESEARCH LETTERS   Volume: 5   Issue: 4   Pages: 680-685   APR 2010

          277.     C. H. Pan, S. D. Lin and C. P. Lee, “2–3 μm mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates”, Journal of applied physics [0021-8979] Pan yr:2010 vol:108 iss:10 pg:103105

          278.     L.C. Li, Y.T. Sung, C.W. Chang, Y.W. Suen, , K.Y. Chene, C.T. Liange, Y.F. Chene, B.C. Lee and C.P. Lee “Microwave-induced DC currents in mesoscopic structures “Physica E: Low-dimensional Systems and Nanostructures Volume 42, Issue 4, February 2010, Pages 1084-1087

          279.     T. C. Lin, Y. H. Wu, L. C. Li, Y. T. Sung, S. D. Lin, L. Chang, Y. W. Suen and C. P. Lee, “Electron delocalization of tensily strained GaAs quatum dots in GaSb matrix”, J. Appl. Phys. 108, 123503 (2010); doi:10.1063/1.3520669

          280.     T. C. Lin, L. C. Li, S. D. Lin, S. W. suen, C. P. Lee, “Anomalous optical magnetic shift of self-assembled GaSb/GaAs quantum dots “, J. Appl. Phys. 110, 013522 (2011);

          281.     C-I Shih, C-H Lin, S-C Lin, T-C Lin², K W Sun, O Voskoboynikov, C-P Lee and Y-W Suen “Effects of crossed states on photoluminescence excitation spectroscopy of InAs quantum dots”, Nanoscale Research Letters 2011, 6:409 doi:10.1186/1556-276X-6-409 Published: 2 June 2011

          282.     S. Y. Wang, H. S. Ling and C. P. Lee, “Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors”, INFRARED PHYSICS & TECHNOLOGY  Volume: 54   Issue: 3   Pages: 224-227, MAY 2011

          283.     H. S. Ling, S. Y. Wang and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs ”, INFRARED PHYSICS & TECHNOLOGY  Volume: 54   Issue: 3   Pages: 233-236, MAY 2011

          284.     I.L Ho,.; W Kuo,.; S.D Lin,.; C.P. Lee, C.T Liang,. C.S Wu,.; Chen, C.D. “Effect of the electromagnetic environment on the dynamics of charge and phase particles in one-dimensional arrays of small Josephson junctions”  Europhysics Letters Volume: 96  Issue: 4  Pages: 47004, 2011

          285.     C. H. Pan, C. H. Chang, and C. P. Lee, “Room Temperature Optically Pumped 2.56-m Lasers With “W” Type InGaAs/GaAsSb Quantum Wells on InP Substrates,” Photonics Technology Letters, IEEE, vol. 24, pp. 1145-1147, 2012.

          286.     H. S. Ling, S. Y. Wang, W. C. Hsu, and C. P. Lee, “Voltage tunable double-band quantum dot inferared photodetectors for temperature sensing”, Opto Express, Volume: 20   Issue: 10   Pages: 10484-10489   Published: MAY 7 2012

 

          287.     CH Chen, H Niu, DC Yan, HH Hsieh, C. P. Lee, C. C. Chi, “Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing” Appl. Phys. Lett., Volume 100, Issue 24, id. 242412 (2012). 

          288.     S. K. Su, O. Voskoboynikov, C. P. Lee, “Well-thickness dependent electron transport effective mass and mobility in Sb-based quantum wells” Physica E, 2012 Feb., vol. 48 p.80-84

          289.     V-T Dai, S-D Lin, S-W Lin, J-Y Wu, L-C Li, and C. P. Lee, “Lateral Two-Dimensional p–i–n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well”, Jpn. J. Appl. Phys. 52 (2013) 014001

          290.     C. H. Pan and C. P. Lee, “Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications” J. Appl. Phys. 113, 043112 (2013)

          291.     H. C. Cheng, Q. Y. Wu, C. H. Pan, C. P. Lee, and G. Lin, “Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laser”, APPLIED PHYSICS LETTERS 103, 211109 (2013)

          292.     H. C. Cheng and C. P. Lee, “Investigation of quantum dot passively mode-locked lasers with excited-state transition”, Optics Express, 2013 Nov 4;21(22):26113-22. doi: 10.1364/

          293.     C. H. Chang, Z. Li. Li, C.-H. Pan, H.-T. Lu, C. P. Lee and S. D. Lin, “Room-temperature mid-infrared “M”-type GaAsSb/InGaAs quantum well lasers on InP substrate”,J. Appl. phys. 115, 063104 (2014); http://dx.doi.org/10.1063/1.4865170

          294.     Y. M. Lin, C. H. Chen and C. P. Lee, “Effect of interfacial layer on the crystal structure of InAs/AlAs_0.16Sb_0.84/AlSb quantum wells”, J. Appl. Physics, 115, 164304 (2014)

          295.     C.H. Chen, H. Niu, D.C. Yan, H.H. Hsieh, R.T. Huang, C.C. Chi, C.P. Lee, “Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing”, Applied Surface Science, Available online 31 March 2014

          296.     S-K Su1, L-C Li, Y-W Suen, J-Y Wu1,H-R Kuo, Y-T Sung, C-P Lee and O Voskoboynikov, “Low temperature and high magnetic field spectroscopic ellipsometry system”. Rev. Sci. Instrum. 85, 055101 (2014) 

          297.     C. P. Lee, N. Tao and B. Lin. “Studies of Safe Operating Area of InGaP/GaAs Heterojunction Bipolar Transistors”, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 4, APRIL 2014

          298.     Van-Truong Dai, Sheng-Di Lin, Shih-Wei Lin, Yi-Shan Lee, Yin-Jie Zhang, Liang-Chen Li, and Chien-Ping Lee, “High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases”,  Optics Express > Volume 22 > Issue 4 > Page 3811, 2014

          299.     YM Lin, KP Lin, TC Lee, MY Li, CP Lee, “InAs-based heterostructure field-effect transistor using AlAs 0.16 Sb 0.84 double barriers”, Electronics Letters, 21 February 2014 doi: 10.1049/el.2014.0629, 2014

          300.     C. H. Lin and C. P. Lee, “Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells “, J. Appl. Phys. 116, 153504 (2014)

          301.      S. K. Su, O. Voskoboynikov, L. C. Li, Y. W. Suen and C. P. Lee “GaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurement”, J. Phys. Soc. Jpn. 83, 114703 (2014)

          302.     T. -Y. Chang CH Pan, KB Hong, G Lin, CP Lee, TC. Lu, "Quantum-Dot Surface Emitting Distributed Feedback Lasers Using Indium–Tin–Oxide as Top Claddings," in IEEE Photonics Technology Letters, vol. 28, no. 15, pp. 1633-1636, 1 Aug.1, 2016, doi: 10.1109/LPT.2016.2562142.

 

Conference papers                                                                                              李建平     C. P. Lee  

             1.        C. P. Lee, I. Samid, A. Gover and A. Yariv, "Embedded multilayer heterostructure epitaxy of GaAlAs/ GaAs", Technical Digest of 3rd American Conf. on Crystal Growth, (1975)

             2.        K. Gamo, T. Inada, I. Samid, C. P. Lee, and J. W. Mayor, "Analysis of GaAlAs heteroepitaxial layers by proton backscattering", in Ion Beam Surface Analysis, Plem Press (1975)

             3.        C. P. Lee, I. Samid, A. Gover And A. Yariv, "Embedded GaAs-GaAlAs heterostructure lasers", Proceeding of Topical meeting on intergrated optics (1976)

             4.        A. Gover, C. P. Lee and A. Yariv, "On the possibility of real time transmission of images in multimode fibers", Prodeeding of Topical meeting on integrated optics (1976)

             5.        C. P. Lee, S. Margalit and A. Yariv, "GaAs/ GaAlAs injection lasers on semi-insulating substrates using laterally diffused junctions" Technical Digest, Topical meeting on integrated and guided wave optics, (1977)

             6.        C. P. Lee, R. Zucca, and B. M. Welch, "Orientation effect on GaAs MESFETs", Technical Digest, Device Research Conf. (1980)

             7.        C. P. Lee, B. M. Zucca and B. M. Welch, "Saturated resistor load for GaAs integrated circuits", Technical Digest, GaAs IC Symposium, 1981

             8.        C. P. Lee and B. M. Welch, "GaAs MESFETs with a partially p type drain",  Technical digest, Device Research Conf. (1982)

             9.        C. P. Lee, "Influence of substrates on the electrical properties of GaAs FET devices and integrated circuits", in III-V Semi-insulating Materials, p.324, S. Makram Ebeid and B. Tuck Eds., Shiva publication, (1982) Invited paper

            10.      M. F. Chang, C. P. Lee, L. D. Hou, R. P. Vahrenkamp, and C. G. Kirkpatrick, "Surface conduction in Semi-insulating GaAs and its influence on backgating effect", 164th meeting of Electro-chemical Society, Washington DC, Oct. 1983

            11.      C. P. Lee, T. Vahrenkamp, S. J. Lee, Y. D. Shen, and B. M. Welch, "Effect of substrate conduction and backgating on the performance of GaAs integrated circuits", Technical Digest, 169, GaAs IC Symposium (1982)

            12.      C. P. Lee, D. L. Miller, D. Hou and R. J. Anderson, "Ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors", Technical digest, Device Research Conf. (1983)

            13.      P. M. Asbeck, C. P. Lee, R. Vahrenkamp and M. L. Sheets, "Piezoelectric effect and orientation dependence of GaAs MESFET", Technical digest, Electronic material conf. (1983)

            14.      C. P. Lee, D. Hou, S. J. Lee, D. L. Miller and R. J. Anderson, "Ultra high speed digital integrated circuits using GaAs/GaAlAs high electron mobility transistors", Technical Digest, 162, GaAs IC Symposium (1983)

            15.      S. J. Lee, R.  Vahrenkamp, G. Kaeling, L. D. Hou, R. Zucca, C. P. Lee and C. G. KirKpatrick, "Ultra low power, high speed GaAs 256-bit static RAM", Technical Digest, 74, GaAs IC Symposium (1983)

            16.      C. P. Lee, "Substrate effects of GaAs integrated circuits", invited paper, Conference on semiconductor interfaces (1983)

            17.      S. J. Lee, C. R. Crowell and C. P. Lee, "Optimization of HEMTs in ultra high speed GaAs integrated circuits", Technical Digest, 103, IEDM (1983)

            18.      A. Firstengerg, P. M. Asbeck and C. P. Lee, "GaAs heterostructure Devices applied to electronic warfare systems", Digest of Association of old crows conf. (1984)

            19.      C. P. Lee, M. F. Chang, P. M. Asbeck, D. L. Hou, R. Vahrenkamp, and C. Kirkpatrick, "Orientaion dependence of device uniformity in GaAsICs", in III-V Semi-insulating Material, Ed. by D. C. Look and J. S. Blakemore, p.347, Shiva Publishing, (1984)

            20.      M. F. Chang, C. P. Lee, R. Vahrenkamp, D. Hou, D. Holmes and C. Kirkpatrick, "Material parameters affecting surface leakage in GaAs ICs", in III-V Semi-insulating Material, Ed. by D. C. Look and J. S. Blakemore, P.378, Shiva Publishing, (1984)

            21.      C. P. Lee, "GaAs IC Technology, present status and future prospects", Proc. International Electron Device and Material symp., Taiwan (1984)

            22.      N. H. Sheng, C. P. Lee, R. T. Chen and D. L. Miller, "Double heterostructure GaAs/GaAlAs high electron mobility transistors", Technical Digest, 352, IEDM (1984)

            23.      C. P. Lee, N. H. Sheng, R. T. Chen and D. L. Miller, "Multi-channel GaAs/GaAlAs high electron mobility transistors", Workshop on Modulation Doped Structures, Santa Barbara, 1984

            24.      M. F. Chang, C. P. Lee, N. H. Sheng, C. Kirkpatrick, and R. T. Chen,  "Dry-process induced isolation-degradation in GaAs integrated circuits"  in Microscopic Identification of Electronic Defects in Semiconductors, MRS vol.46, 415, 1984

            25.      M. F. Chang, N. H. Sheng, C. P. Lee, and R. T. Chen, "Self-aligned substutional gate process for HEMT's", Workshop on compound semiconductor microwave material and devices (1985)

            26.      C. P. Lee, N. H. sheng, H. F. Lewis, H. T. Wang, D. L. Miller and J. Donovan, "GaAs/GaAlAs high electron mobility transistors for analog to digital convertor applications", Technical Digest, 324, IEDM (1985)

            27.      N. H. Sheng, H. T. Wang, S. J. Lee, C. P. Lee, G. J. Sullivan and D. L. Miller, "A high speed 1k-bit high electron mobility transistor stactic RAM", Technical digest, GaAs IC symposium (1986)

            28.      T. H. Liu, C. P. Lee, W. Y. Chen, T. F. Lei and S. C. Wu, "Metal Silicide Schottky contact to GaAs and GaAlAs" Proceedings of the 1988 International EDMS, p.254

            29.      D. G. Liu, C. P. Lee and H. L. Hwang, "Design and analysis of high electron mobility field effect transistors by a self consistent method", Proc. International Symp. on VLSI Technology, Systems and Applications,  p.121, 1989

            30.      D. C. Liu, C. N. Chen, C. P. Lee and T. F. Lei, "High power semi-conductor laser array with the resitriction of Si N  capped layer and proton bombardment", Proc. of EDMS, p.30, Hsin Chu, 1989

            31.      C. N. Chen and C. P. Lee, "Twin channel laser array", Proc. of EDMS, p.36, Hsin Chu, 1989

            32.      H. F. Chuang and C. P. Lee, "Molybdenum silicide Schottky contacts to GaAs" Proc. of EDMS, p.182, Hsin Chu, 1989

            33.      C. Lin and C.P. Lee, "Comparison of Au/Ni/Ge, Au/Pd/Ge and Au/Pt/Ge ohmic contacts to N-type GaAs" Proc. of EDMS, p.186, Hsin Chu, 1989

            34.      S. H. Lo and C. P. Lee, "Two-dimensional simulation of orientation effects in self-aligned GaAs MESFETs", Proc. of EDMS, p.192, Hsin Chu, 1989

            35.      J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang and D. G. Liu, "Repetitive negative differential resistances in serially connected double-barrier resonant tunneling structures", Proc. of EDMS, p.263, Hsin Chu, 1989

            36.      S. H. Lo and C. P. Lee "Two-dimensional simulation of stress induced orientation effect in self-aligned GaAs MESFETs", IEEE GaAs IC symposium 1989, San Diego.

            37.      D. C. Liou, J. S. Tsang, C. P. Lee, K. H. Chang, D. G. Liu, and J. S. Wu, "Low threshold current AlGaAs/GaAs GRINSCH single quantum well lasers grown by MBE", International EDMS, 1990

            38.       C. P. Lee, “III-V molecular beam epitaxy and its application”,  Proc., Annual conf. of Chinese Society for Materials Science,  p. 97, 1990

            39.       J. S. Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu and D. C. Liou, “Quantum effect of the source electrode on electrical and optical characteristics of double barrier resonant tunneling structures”, Technical Digest, paper 13.6, IEDM, San Franscisco, 1990

            40.       D. G. Liu, C. P. Lee, K. H. Chang, J. S. Wu, and D. C. Liou, “Enhanced carrier confinement in delta-doped quantum well structures grown by molecular beam epitaxy”, in Electronic, optical and device properties of layered structures, Proc. of MRS meeting, p.45, Boston 1990

            41.       K. H. Chang, C. P. Lee, J. S. Wu, D. C. Liou, W. T. Wang, J. P. Chen, and L. J. Chen, "Correction factor of Al composition in AlGaAs determined by RHEED intensity oscillation during MBE growth", International EDMS, 1990

            42.      W. H. Chiang, Y. K. Tu, C. P. Lee and T. F. Lei, "Studies on AlGaAs/GaAsetched mesa buried heterostructure laser diodes on semi-insulating substrates", International EDMS, 1990

            43.      C. P. Lee, "Carrier confinement of delta-doped GaAs and quantum wells", Invited talk, Annual Physical Society Meeting, Port Elizabeth, South Africa

            44.      K. D. Pedrotti, N. H. Sheng, C. W. Seabury, and C. P. Lee, “Ultra-high speed heterojunction bipolar transistor based optoelectronic receivers”, Proc. of GOMAC conference, 1991

            45.      K. H. Chang, K. L. Tsai, C. P. Lee, " Two-color quantum well infrared detectors", International EDMS, Taipei, 1992

            46.       T. S. Tsang, D. C. Liou, C. P. Lee, C. M. Tsai, " High power GaAs/AlGaAs separate confinement single quantum well laser arrays", International EDMS, Taipei, 1992

            47.       H. R. Chen, C. P. Lee, C. Y. Chang, J. S. Tsang, and K. L. Tsai, "The study of emitter thickness effects on the heterostructure emitter bipolar transistors", International EDMS, 1992

            48.       H. R. Chen, K. L. Tsai, J. S. Tsang, C. Y. Chang, and C. P. Lee, "AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated by Two-stage Molecular Beam Epitaxy", International EDMS, 1992

            49.       K. D. Pedrotti, C. W. Seabury, N. H. Sheng, C. P. Lee, R. Agarwal, A. Chen, and D. Renner, “ 6 GHz operatin of a flip-chip mounted 1.3um laser diode on an AlGaAs/GaAs HBT laser driver circuit”,  presented in OFC, San Jose 1992

            50.       C. P. Lee, " Delta doping in MBE grown GaAs and related heterostructures",  Invited talk, International Solid State and Circuit Technology Conference, Beijing, 1992

            51.       S. J. Chang and C. P. Lee, "Numerical simulation of sidegating effects in GaAs MESFETs"  IEEE GaAs IC Symp., Miami, 1992

            52.      J. S. Tsang, D. C. Liou, J. M. Tsai, C. P. Lee and F. Y. Juang, "Fundamental mode operation of high power GaInAs/GaAs laser array",  SPIE on Optical Communication, Computing and Components, 1992

            53.      S. T. Yen, C. M. Tsai and C. P. Lee, "Multi-stack multiple quantum barriers using GaAs/AlGaAs superlattices", EDMS 1993

            54.      . D. C. Liu, C. M. Tsai and C. P. Lee, "Fabrication and analysis of quantum dots using insitu MBE growth and thermal etching", EDMS 1993

            55.       S. J. Chang, C. P. Lee, "Numerical simulation of geometrical dependence of sidegating effect in GaAs MESFETs", Semiconductor Modeling and Simulation Conference, Taipei, 1993

            56.       D. C. Liou, C. P. Lee, K. L. Tsai, and C. M. Tsai, "Modifiction of InGaAs composition by modulation As flux using a valved As cracker",Solid State Device Meeting, proc. p. 766,  SSDM, Chiba, Japan, 1993

            57.      J. S. Tsang, C. P. Lee, D. C. Liou, H. R. Chen, K. L. Tsai, and C. M. Tsai, "Investigation of Indium Doping in InGaAs/GaAs/AlGaAs Graded Index Separated Confinement Heterostructure Lasers", International Optics Conference, Shanghai, 1993

            58.       K. L. Tsai, K. H. Chang, C. P. Lee, K. F. Huang, J. S. Tsang, "A two color infrared detector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells", International Optics Conference, Shanghai, 1993

            59.      F. Wang, L. B. Sjogren, T. Y. Liu, C. W. Domier, N. C. Luhmann, K. L. Tsai, and C. P. Lee, "Millimeter-wave Schottky diode beam control array", APMC, Oct 1993

            60.      D. C. Liu, C. P. Lee and S. L. Shy, "Fabrication of quantum dots using insitu etching and regrowth during MBE", Technical digest of IEDM, Washington D.C., 1993

            61.      K. L. Tsai, C. P. Lee, K. H. Chang, J. S. Tsang, and H. R. Chen, "Two-dimensional bi-periodic grating coupled one and two-color quantum well infrared photodetectors", International Electron Device and Materials Symposium, Hsinchu, 1994

            62.      S. H. Lo and C. P. Lee, "Numerical analysis of the gate lag phenomenon in GaAs MESFETs", International Electron Devices and Materials Symposium, Hsinchu, 1994

            63.      H. R. Chen, C. P. Lee, C. H. Huang, C. Y. Chang, J. S. Tsang and K. L. Tsai, " Application of delta doping in heterojunction bipolar transistors", International Electron Devices and Materials Symposium, Hsinchu, 1994

            64.      S. L. Shy, D. C. Liu, S. H. Lee, T. F. Lei, C. P. Lee, and W. A. Loong, "Characterization of deep submicron patterns and quantum dots using atomic force microscope", International Electronic Devices and Materials Symposium, Hsinchu, 1994

            65.      J. S. Tsang, C. P. Lee, J. C. Fan, K. L. Tsai, and H. R. Chen, "Composional disordering of AlGaAs/GaAs superlattices by low-temperature grown GaAs", International Electronic Devices and Materials Symposium, Hsinchu, 1994

            66.      H. R. Chen, C. Y. Chang, C. H. Huang, K. L. Tsai, J. S. Tsang, and C. P. Lee, "AlGaAs/GaAs heterojunction bipolar transistors with shifted junction", International Electronic Devices and Materials Symposium, Hsinchu, 1994

            67.      S. L. Shy, D. C. Liu, T. F. Lei, and C. P. Lee, "Inspection and metrology of deep submicron patterns and quantum dots using atomic force microscope", Microprocess Conference, Hsinchu, 1994

            68.      K. L. Tsai, C. P. Lee, J. S. Tsang and H. R. Chen, and D. C. Liu, "Two-dimensional bi-periodic grating coupled one- and two- color quantum well infrared photodetectors", International Conference on Solid State Devices and Materials, Yokohama, 1994, Proc. p. 127

            69.      J. S. Tsang, C. P. Lee, J. C. Fan, K. L. Tsai, and H. R. Chen, "Composional disordering of AlGaAs/GaAs superlattices by low-temperature grown GaAs", International Conference on Solid State Devices and Materials, Yokohama, 1994, Proc. p. 166

            70.      T. C. Chang, M. Y. Hsu, C. Y. Chang, C. P. Lee, T. J. Jung, W. C. Tsai, G. W. Huang, and Y. J. Wei, "Characterization of the porous boron delta-doped Si superlattice", International Conference on Solid State Devices and Materials, Yokohama, 1994, Proc. p. 730

            71.      C. P. Lee, "High quality quantum dots fabricated by MBE", invited talk, ICMPC-94, Kunmin

            72.      C. P. Lee, 'MBE growth of quantum devices", invited talk, ICSFS (International Conference on Solid Films and Surfaces), Hsinchu

            73.      J. C. Fan, C. P. Lee, C. H. Huang, and J. E. Huang, "Transplantation of epitaxially lifted-off GaAs/AlGaAs HBTs to Si and InP", International Conference on Electronic Materials, Hsinchu,1994

            74.      H. F. Chuang, C. P. Lee and D. C. Liu, "Thermal reactions of Pd/GaAs contacts and Ni/GaAs contacts studied by electrical methods", International Conference on Electronic Materials, Hsinchu,1994

            75.      S. W. Chiou, C. P. Lee and M. J. Jou, "The performance of AlGaInP light emitting diodes using Zn and Mg dopants", 7th workshop on Organometallic Vapor Phase Epitaxy, Fort Myers, Folorida, 1995

            76.      T. C. Chang, M. Y. Hsu, C. Y. Chang, C. P. Lee, T. G. Jung, W. C. Tsai, G. W. Huang, L. P. Chen, and Y. J. Mei, "Electroluminescence from the porous boron doped Si superlattice", ICSFS-1994, also in Applied Surface Science, 92, 571, 1996

            77.      M. H. Tsai, S. C. Sun, C. P. Lee, S. Y. Yang, and H. T. Chiu, “A comprehensive investigation on the selectivity of CVD aluminum from dimethylethylamine Alane", Proc. of 12th International VLSI Multilevel Interconnection Conference, Santa Clara, 1995

            78.      S. T. Yen, G. Lin, D. C. Liu, C. M. Chai, and C. P. Lee, “980nm InGaAs/AlGaAs quantum well lasers with extremely low beam ivergence”, to be presented at 15^th IEEE International Semiconductor laser conference, Isreal, 1996

            79.      C. M. Tsai and C. P. Lee, “Stacked asymmetric Fabry-Perot modulators with improved low-voltage characteristics”, IEDMS, paper B5-3, 1996

            80.      J. C. Fan, C. M. Tsai and C. P. Lee, “High efficiency GaAs/AlGaAs thin-film multiple quantum well reflection modulators with external mirrors on Si”, IEDMS, paper B5-9, 1996

            81.      D. G. Liu and C. P. Lee, “Simulation and analysis of the capitance-voltage characteristics of the delta-doped semiconductors”, IEDMS, paper BP-8, 1996

            82.      H. H. Cheng, R. J. Nicholas, F. Y. Tsai, and C. P. Lee, “Photoluminescence study of InGaAs/GaAs quantum dots in high magnetic fields up to 45 Telsla”, International Semiconductor Device Research Symposium, p.31, Virginia, 1997

            83.      F. Y. Tsai and C. P. Lee, “Photoluminescence study of high quality InGaAs/GaAs quantum dots on (111)B substrates”, 2^nd International Symposium on Formation, Physics, and Device Application of Quantum Dot Structures, p.192, Japan, 1998

            84.      J. X. Shen, Y. Oka, H. H. Cheng, F. Y. Tsai and C. P. Lee, “Exciton relaxation in GaInAs/GaAs self-organized quantum dots”, 11^th International Conference on Superlattices, Microstructures and Microdevices, Egypt, 1998

            85.      F. Y. Tsai, C. P. Lee, J. X. shen, Y. Oka and H. H. Cheng, “Time resolved photoluminscence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates”, Third International Workshop on Novel Index Surfaces, Madrid, Spain, 1998

            86.      S. H. Lee, J. J. Wu, S. T. Peng, C. C. Hu, C. F. Jou, and C. P. Lee, “A CPW-to-slotline active Gunn diode leaky wave antenna” ICMMT'98. 1998 International Conference on Microwave and Millimeter Wave Technology. Proceedings, Publishing House of Electron. Ind. 1998, pp.305-8.Beijing, China.

            87.      S. Y. Wang and C. P. Lee, “Non-uniform quantum well infrared photodetector with low dark current and high blip temperatures”, Device Research Conference, technical digest 78, 1999

            88.      M. C. Hsu, C. H. Kuan, S. Y. Wang and C. P. Lee, “Multiple-color GaAs/AlGaAs superlattice infrared photodetector controlled by the polarity and magnitude of the bias voltage”, IEDM, Washington DC, 1999

            89.      O. Voskoboynikov, C. P. Lee and O. Tretyak, “Spin-orbit interaction and energy states in semiconductor quantum dots”, International Conference on the Physics and Application of Spin related Phenomena in Semiconductors, Japan 2000

            90.      O. Voskoboynikov, C. P. Lee and O. Tretyak, “Spin orbit splitting and crossover of electronic states in cylindrical semiconductor quantum dots”, Symp. On Spin Electronics, Halle, Germany 2000

            91.      O. Voskoboynikov, S. S. Liu, and C. P. Lee, “Spin-dependent tunneling time in resonant tunneling heterostructure at zero magnetic field”, Symp. On Spin Electronics, Halle, Germany 2000

            92.      V. Ilchenko, S. D. Lin, C. P. Lee and O. Tretyak, “DLTS characterization of InAs self-assembled quantum dots”, 27^th International Conference on Compound Semiconductors, Montery, CA 2000

            93.      G. Lin and C. P. Lee, “Comparison of Material Characteristics for 1300 nm Quantum Well Lasers”, IPC2000, Hsinchu, Taiwan”, IPC2000, Hsinchu, Taiwan

            94.      J. L. Liu, O. Voskoboynikov, Y. Li, C. P. Lee and S. M. Sze, “Electron energy level calculations for cylindrical narrow gap semiconductor quantum dots”, Conference on Computational Physics 2000, Australia, 2000

            95.      K. W. Sun, H. Y. Chang, C. M. Wang, T. S. Song, S. Y. Wang, and C. P. Lee, “Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/AlGaAs quantum wells”, 8^th Int. Symp on Nanostructures: Physics and Technology, St. Petersburg, Russia, 2000

            96.      S. Y. Wang, Y. C. Jin and C. P. Lee, “Detailed studies of non-uniform quantum well infrared photodetectors”, International Intersubband Transition Conference, Dana Point, 2000

            97.      S. Y. Wang, H. W. Wu and C. P. Lee, “High performance quantum dot infrared photodetectors”, International Intersubband Transition Conference, Dana Point, 2000

            98.      C. M. Wang, H. Y. Chang, T. S. Song, K. W. Sun, S. Y. Wang, and C. P. Lee, “Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/Al_xGa_1-xAs quantum wells”, Photonics Taiwan 2000

            99.      J. Lefebvre, P. J. Poole, C. P. Lee, S. F. Hu, G. C. Aers, R. L. Williams, “One-dimensional arrays of self-assembled InAs/InP quantum dots”, Photonics Taiwan 2000

          100.     O. Voskoboynikov, J. L. Liu, Y. Li, C. P. Lee, and S. M. Sze, “Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot” CCP2000, Tech Dig., Qweensland, 2000 p. 68

          101.     C. E. Huang, C. P. Lee, R. T. Huang, and M. F. Chang, “1/f noise characterization and high frequency performance of GaInP/GaAs/AlGaAs PHEMT”, GaAs 2001, European Microwave week, London

          102.     B. C. Lee, K. W. Sun and C. P. Lee, “Molecular beam epitaxial growth and photoluminescence studies of InAs self-organized quantum dots on patterned GaAs(001) substrates”, Nano meeting 2001, Minsk, Belarus

          103.     S.D. Lin, H.J. Lee, K.W. Sun, and C.P. Lee ,“Investigation of hot electron-neutral acceptor luminescence in moderate wide In0.15Ga0.85As/GaAs multiple quantum wells” DPC 2001, Lyon, France

          104.     H.J. Lee, C.P. Lee and K.W. Sun, “Theoretical investigation of hot electron relaxation in GaAs/Al_xGa_1-xAs QWs”, Phonon 2001, Hanover, New Hampshire

          105.     Yiming Li, O.Voskoboynikov, J.-L. Liu, C.P.Lee, and S.M.Sze, Spin dependent boundary conditions and spin splitting in cylindrical quantum dots, Proc. Of the Fourth International Conference on Modeling and Simulation of Microsystems (MSM 2001), South Carolina, 2001, pp.538-542.

          106.     Voskoboynikov, H. C. Huang, C. F. Shih, and C. P. Lee, Electron states and spin orbit splitting in quantum rings and dots, The First International Conference on Spintronics and Quantum Information Technology (SPINTECH-I), Abstract Notebook, Maui, Hawaii, 2001, p.58.

          107.     Voskoboynikov, C. P. Lee, and O. Tretyak, Artificial Anomalous Hall Effect in Random Quantum Dot Arrays and a Semiconductor Spin Analyzer, The First International Conference on Spintronics and Quantum Information Technology (SPINTECH-I), Abstract Notebook, Maui, Hawaii, 2001, p.58.

          108.     Voskoboynikov, H. C. Huang, C. P. Lee, and O. Tretyak, Spin dependent electron scattering from quantum dots and antidots in two-dimensional channels, The 14th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS – 14), Abstracts, Prague, Czech Republic, 2001.

          109.     Yiming Li, O.Voskoboynikov, C.P.Lee, and S.M.Sze, Calculation of induced electron states in three dimensional semiconductor artificial molecules, Conference on Computational Physics 2001 (CCP-2001), Abstracts, Aachen, Germany, 2001.

          110.     Yiming Li, O.Voskoboynikov, C.P.Lee, S.M.Sze, and O. Tretyak, Effect of shape an size on electron transition energies of InAs semiconductor quantum dots, submitted to International Conference on Solid State Devices and Materials 2001 (SSDM 2001), Tokyo, Japan, 2001,

          111.     Yiming Li, O.Voskoboynikov, C.P.Lee, C.-F. Shih, S.M.Sze, and O. Tretyak, Magnetic field dependence of electron energy states in 3D nano-scopic quantum rings, submitted to The first IEEE Conference on Nanotechnology (IEEE-NATO 2001), Maui, Hawaii, 2001.

          112.     O. Voskoboynikov, H. C. Huang, C. P. Lee, and O.Tretyak, Spin-orbit interaction and spin-dependent electron scattering in 2D channels, The first IEEE Conference on Nanotechnology (IEEE-NATO 2001), Maui, Hawaii, 2001.

          113.     Yiming Li, O.Voskoboynikov, C.P.Lee, S.M.Sze, “A nonlinear iterative method for InAs/GaAs semiconductor quantum dots”, Inter. Conf. On Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece, 2001

          114.     S. W. Chiou, C. P. Lee and G. Lin, “Control the transverse mode of VCSEL by anti-reflection coating”, SPIE Photonic West 2001

          115.     K. Y. Huang, Y. Li, C. P. Lee and S. M. Sze, “A computional efficient method for HBT intermodulation distortions and two-tone characteristics”, Inter. Conf. On Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece, 2001

          116.     Y. Li, K. Y. Huang, C. P. Lee, and S. M. Sze, “A novel simulation approach for the numerical solution of heterojunction bipolar transistors”, CCCP 2001, Aachen, Germany, 2001

          117.     C.C. Chen, H.C. Chen, W.H. Hsieh, C.H. Kuan, S.D. Lin, C.P. Lee, “Multi-wavelength infrared detection realized with two distinct superlattices, separated by a blocking barrier”
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. P.19-24 May 2002

          118.     F. Chau, C. P. Lee, C. Dunnrowicz, and B. Lin, “Wafer level reliability tests of InGaP HBTs, using high current stress”, GaAs ManTech Conference, 2002

          119.     S. D. Lin, Z. C. Lin and C. P. Lee, “Growth of stacked InAs quantum structures in InAlAs matrix on (100)InP” International Conference on Low Dimensional Structures and Devices, Brazil, 2002

          120.     Y. Li; H-M Lu, O. Voskoboynikov, C.P. Lee, S.M. Sze, “Energy structure and magnetization effect of semiconductor quantum rings” Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on , 2002

          121.     H. C. Huang, O. Voskoboynikov, and C. P. Lee, “Scattering by a screened Coulomb field in two dimensions”, International Conference on Low Dimensional Structures and Devices, Brazil, 2002

          122.     Huang HC. Voskoboynikov O. Lee CP, “Role of the spin-orbit interaction in elastic scattering of electrons in quantum wells.”, Low Dimensional Structures and Devices Conference (LDSD'2002). Fortaleza, Brazil. 8-13 Dec. 2002

          123.     Yiming Li, Voskoboynikov O, Hsiao-Mei Lu, Lee CP, Sze SM, “Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings”, 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund Univ. 2002

          124.     C. P. Lee, “Semiconductor quantum structures for optoelectronic device applications”, Invited talk, ICEM2002, Xian, China

          125.     Voskoboynikov O. Lee CP.,” Spin-orbit interaction and all-semiconductor spintronics”, PASPS Conference. Wurzburg, Germany. July 2002

          126.     Yiming Li, Lu H-M, Voskoboynikov O, Lee CP, Sze SM., “Computer simulation of magnetization for 3D ellipsoidal torus shape InAs/GaAs quantum rings”, 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science. Lund Univ. 2002

          127.     Wang SY. Chen SC. Lin SD. Lin CJ. Lee CP.,” InAs/GaAs quantum dot infrared photodetectors with different growth temperatures”, International Workshop on Quantum Well Infrared Photodetectors. Torino, Italy. 13-17 Oct. 2002.

          128.     S.T. Yen, V. Tulupenko, E.S. Cheng, Y.H. Feng, C.P. Lee, V. Ryzhkov, A. Dalakyan, “Light absorption and resonant levels in p-Si” Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on  ,Volume: 2 , 16-20 Sept. 2003

          129.     Lee BC. Voskoboynikov O. Lee CP., “III-V semiconductor nano-rings.” International Symposium on Functional Semiconductor Nanostructures 2003 - FSNS2003. Atsugi, Kanagawa, Japan.2003

          130.     Voskoboynikov O. Lee CP., “Magnetization and magnetic susceptibility of InAs nano-rings.”, 11th International Conference on Narrow Gap Semiconductors. Buffalo, NY, 2003

          131.     N. L. Wang, W. Ma, C. Dunnrowitcz, H. F. Chau, B. Lin and C. P. Lee, “28V high efficiency and high linearity InGaP/GaAs power HBTs”, 2003 PA Workshop, UCSD

          132.     Yen ST, Tulupenko V, Cheng ES, Feng YH, Lee CP, Ryzhkov V, Dalakyan A. “Light absorption and resonant levels in p-Si.”, Proceedings of CAOL'2003. 1st International Conference on Advanced Optoelectronics and Lasers. Jontly with 1st Workshop on Precision Oscillations in Electronics and Optics (IEEE Cat. No.03EX715). IEEE. Part vol.2, 2003, pp.30 vol.2. Piscataway, NJ, USA.

          133.     C. H. Liao, C. W. Gwan and C. P. Lee, “Extraction of temperature dependent Ec in InGaP/GaAs HBT using 1-D simulation”, SSDM, Tokyo, 2004

          134.     Jiun Haw Chu, O. Voskoboynikov , and C. P. Lee, “Slow Light in Photonic Crystals”, Fifth international conference on low dimensional physics and devices, Mexico 2004

          135.     H. Niu, C.H Chen, H.Y Wang, S.C. Wu and C. P. Lee, “Thermal annealing effect on InAs/GaAs quantum dots studied by ion channeling”, International workshop on high resolution depth profiling, Bar Harbor, Main 2005

          136.     N. L. Wang, W. Ma, S. Xu, E. Camargo, X. Sun, P. Hu, Z. Tang, H. F. Chau, A. Chen and C. P. Lee, “28V high linearity and rugged InGaP/GaAs power HBT”, IEEE Int. Microwave Symp., San Francisco, 2006

          137.     S. C. Huang, E. Kurmochi, T. Watanabe, C. P. Lee, “Group delay analysis of low-loss Si photonic crystal waveguides”, Japan Society of Applied Physics, 2005

          138.     H. S. Lin, S. D. Lin, S. Y. Wang, M. C. Lo and C. P. Lee, “Selective excitation photoluminescence of ultra small InAs slef-assembled quantum dots”, Trend in Nonotechnology 2006, Grenoble, France 2006

          139.     M. C. Lo, S. D. Lin, S. Y. Wang and C. P. Lee, “Photoluminescence study of high density InAs/GaAs quantum dots”, Trend in Nonotechnology 2006, Grenoble, France

          140.     H. F. Chau, B. J. Lin, Y. Chen, M. Kretschmar, C. P. Lee, “Reliability study of InGaAs/GaAs HBTs for 28V operation”, IEEE Compound Semiconductor IC Symp, San Antonio, Nov 2006

          141.     H. Y. Wang, H. Niu, C. H. Chen, S. C. Wu and C. P. Lee, „Strain study of buried self-assembled InAs quantum dots using MEV ion channeling“, MRS spring meeting, San Franscisco, 2006

          142.     S. C. Huang, M. Kato, E. Kuramochi, C.P. Lee, and M. Notomi, “Experimental Observation of Inflection-Point Slow Light Modes in Photonic Crystal Coupled Waveguides”, CLEO 2007, Baltimore

          143.     C. P. Lee, “Determination of energy level positions of InAs and GaSb nanostructures grown by MBE”, MBE-Taiwan 2007, invited, Kao-Shiung

          144.     S. H. Huang, T. H. Yang, C. P. Lee, and S. D. Lin, “Single Mode Operation of Integrated Photonic Crystal Nanocavity Coupled Surface Emitting Lasers”, CLEO 2007, Baltimore

          145.     Ma WL, Sun XP, Hu P¹, Yao JS, Lin B  Chau HF, Liu L, Lee CP (Lee, “High Linearity 40 Watt, 28V InGaP/GaAs HBT” 2008 IEEE MTT-S International Microwave Symposium Digest, Atlanta, GA, JUN 15-20, 2008

          146.     H. Niu^{a, ,} , C.H. Chen^b, H.Y. Wang^c, S.C. Wu^b and C.P. Lee, “Ion beam studies of InAs/GaAs quantum dots after annealing”, Eighteenth International Conference on Ion Beam Analysis, Eighteenth International Conference on Ion Beam Analysis

          147.     Zhang XK, Chau F, Lin B, Sun XP, Ma WL, Hu P, Yao JS, Lee CP, “A Scalable High Power Nonlinear HBT Model for a 28V HVHBT”, 2008 IEEE MTT-S International Microwave Symposium DigestAtlanta, GA, JUN 15-20, 2008

          148.     M. C. Lo, S. Y.Wang, S. D. Lin, H. S. Ling, C. P. Lee,“Photocurrent spectrum tuning of quantum dot infrared photodetectors”, , MBE-Taiwan 2009, Hualien, Taiwan (June, 2009).

          149.     T. C. Lin, H. S. Ling, Y. J. Fu, C. H Lin, S. D. Lin, W. H. Chang, C. P. Lee,2. “Magneto-optical study of InAs/GaAs quantum rings”, MBE-Taiwan 2009, Hualien, Taiwan (June, 2009).

          150.     C. H. Pan, S. D. Lin, C. P. Lee “Effect of kinetic energy of indium atoms on InAs quantum dots growth”, , MBE-Taiwan 2009, Hualien, Taiwan (June, 2009).

          151.     Gray Lin, H.C. Cheng and C.P. Lee "Incomplete mode-locking in one-section QD lasers with ultra-long cavity" CLEO-Europe 2009.

          152.     Gray Lin, Van-Truong Dai, C. P. Lee "Modeling the Simultaneous Two Ground-State Lasing Emissions in Chirped Quantum Dot Lasers", The 22nd annual meeting of the IEEE Photonics Society.

          153.     Ta-Chun Lin, H. S. Ling, Y. J. Fu, C. H. Lin, S. D. Lin, W. H. Chang, C.P. Lee “Magnetophotoluminescence of single InAs/GaAs quantum rings” , TNT 2009, Barcelona, Spain (September 7-11).

          154.     S.Y. Wang^a, , H.S. Ling^b, M.C. Lo^b and C.P. Lee, “Detection wavelength and device performance tuning of InAs QDIPs with thin AlGaAs layers”, International Conference on Quantum Structure Infrared Photodetectors (QSIP) 2009

          155.     H.S. Ling^a, , S.Y. Wang^b, C.P. Lee^a and M.C. Lo, “Confinement-enhanced dots-in-a-well QDIPs with operating temperature over 200 K”, International Conference on Quantum Structure Infrared Photodetectors (QSIP) 2009

          156.     X. K. Zhang, F. Chau. B. Lin, X. P. Sun, W. Ma, P. Hu, J. S. Yao and C. P. Lee, “Nonlinear HBT Models for HVHBT 15W Power Amplifiers”, 4th European Microwave Integrated Circuits Conference Location: Rome, ITALY Date: SEP 28-29, 2009

          157.     Sheng Kai Su, Liang Chen Li, Yuen Wuu Suen, Jau Yang Wu, Hong Rong Kuo, Y. T. Sung and C. P. Lee, “Ellipsometer System for Low Temperature and High Magnetic Field”, The 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, Japan 2010

          158.     H. S. Ling, S. Y. Wang and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs”,International Conference on the Quantum Structure Infrared Photodector (QSIP) Location: Istanbul, TURKEY Date: AUG 15-20, 2010

          159.     T. C. Lin, L. C. Li, C. Cheng, Y. T. Sung, S. D. Lin, Y. W. Suen^, , and C. P. Lee ^” Optical magnetic red shift of self-assembled GaSb/GaAs quantum dots in a Voigt Configuration”, EP2DS, 2011, Florida

          160.     S. K. Su, L. C. Li, Y. W. Suen ,Y. T. Sung , and C. P. Lee, “Magneto-optical study of GaAs bulk exciton using ellipsometer”, EP2DS, 2011, Florida

          161.     Wang S. Y.; Ling H. S.; Lee C. P., “Temperature dependence of quantum efficiency in Quantum Dot Infrared Photodetectors”, International Conference on the Quantum Structure Infrared Photodector (QSIP) Location: Istanbul, TURKEY Date: AUG 15-20, 2010 

          162.     C. H. Pan, S. D. Lin, and C. P. Lee, “2~2.5μm mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates,” 16^th international conference in molecular beam epitaxy 2010, Berlin, German (Aug. 22-27, 2010)

          163.     C. H. Pan, C. H. Chang, S. D. Lin, C. P. Lee, “Room temperature 2.38 μm laser using InGaAs/GaAsSb W-type quantum wells on InP substrate”, Optics and Photonics Japan (OPJ 2010), Tokyo, Japan (Nov. 2010).

          164.     Lin G, Dai VT, Lee CP “Modeling the Simultaneous Two Ground-State Lasing Emissions in Chirped Quantum Dot Lasers” 22nd Annual Meeting of the IEEE-Photonics-Society, OCT 04-08, 2009 Belek Antalya, TURKEY

          165.     Sheng Kai Su, Liang Chen Li, Yuen Wuu Suen, Jau Yang Wu, Hong Rong Kuo, Y. T. Sung and C. P. Lee, “Ellipsometer System for Low Temperature and High Magnetic Field”, The 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, Japan 2010

          166.     T. C. Lin, L. C. Li, C. Cheng, Y. T. Sung, S. D. Lin, Y. W. Suen^, , and C. P. Lee ^” Optical magnetic red shift of self-assembled GaSb/GaAs quantum dots in a Voigt Configuration”, EP2DS, 2011, Florida

          167.     S. K. Su, L. C. Li, Y. W. Suen ,Y. T. Sung , and C. P. Lee, “Magneto-optical study of GaAs bulk exciton using ellipsometer”, EP2DS, 2011, Florida

          168.     Nick GM Tao, Chien-Ping Lee, Anthony St. Denis and Tim Henderson, “InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect”, CS MANTECH Conference, May 13th - 16th, 2013, New Orleans, Louisiana, US

          169.     Chia-Hao Chang, Zong-Lin Li, Hong-Ting Lu, Chien-Ping Lee, and Sheng-Di Lin, “Low-threshold InGaAs/GaAsSb ‘W’-type quantum well laser on InP substrate”, CLEO 2014, San Jose, CA